Title:
METHOD, SYSTEM AND CIRCUIT FOR PROGRAMMING A NON-VOLATILE MEMORY ARRAY
Document Type and Number:
WIPO Patent Application WO2005041206
Kind Code:
A8
Abstract:
The present invention is a multi-phase method, circuit and system for programming non-volatile memory ("NVM") cells in an NVM array (100). The present invention may include a controller (110) to determine when, during a first programming phase (2000), one or more NVM cells of a first set of cells reaches or exceeds a first intermediate voltage, and to cause a charge pump circuit (130) to apply to a terminal of the one or more cells (100) in the first set second phase programming (3000) pulses to induce relatively greater threshold voltage changes in cells having less stored charge than in cells having relatively more stored charge.
Inventors:
COHEN GUY (IL)
EITAN BOAZ (IL)
EITAN BOAZ (IL)
Application Number:
PCT/IL2004/000981
Publication Date:
June 30, 2005
Filing Date:
October 27, 2004
Export Citation:
Assignee:
SAIFUN SEMICONDUCTORS LTD (IL)
COHEN GUY (IL)
EITAN BOAZ (IL)
COHEN GUY (IL)
EITAN BOAZ (IL)
International Classes:
G11C11/34; G11C11/56; G11C16/04; G11C16/10; G11C16/34; (IPC1-7): G11C16/04
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