Title:
METHOD AND SYSTEM FOR INSPECTION OF DEFECTIVE MTJ CELL IN STT-MRAM
Document Type and Number:
WIPO Patent Application WO/2019/194450
Kind Code:
A1
Abstract:
The present invention relates to a film quality inspection method for providing a stress evaluation scheme for inspection of film quality of a magnetic tunnel junction (MTJ) element in a spin-transfer torque magnetic random access memory (STT-MRAM), and a system therefor, wherein a bipolar signal and a unipolar signal including a unipolar hole (positive polarity) and a unipolar electron (negative polarity) are simultaneously applied to the same MTJ element, and then according to the result of comparison of cycling gaps, the quality of a thin film having a thickness about 1nm can be inspected.
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Inventors:
SONG YUN HEUB (KR)
Application Number:
PCT/KR2019/003490
Publication Date:
October 10, 2019
Filing Date:
March 26, 2019
Export Citation:
Assignee:
UNIV HANYANG IND UNIV COOP FOUND (KR)
International Classes:
G11C29/50; G01R31/26; G11C11/16; H01L21/66; H01L43/02; H01L43/08; H01L43/12
Domestic Patent References:
| WO2017164229A1 | 2017-09-28 |
Foreign References:
| KR101774671B1 | 2017-09-05 | |||
| KR20170140176A | 2017-12-20 | |||
| US20170358370A1 | 2017-12-14 |
Other References:
C.M. CHOI: "Endurance of magnetic tunnel junctions under dynamic voltage stress", ELECTRONICS LETTERS, vol. 53, no. 16, August 2017 (2017-08-01), pages 1146 - 1148, XP006074342, DOI: 10.1049/el.2017.1579
S. VAN BEEK: "Four Point Probe Ramped Voltage Stress as an Efficient Method to Understand Breakdown of STT-MRAM MgO Tunnel Junctions", 2015 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, 19 April 2015 (2015-04-19), XP032780872, DOI: 10.1109/IRPS.2015.7112818
JUNG-MIN LEE: "Thickness and Temperature Dependences of the degradation and the breakdown for MgO-based Magnetic Tunnel Junctions", JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 16 April 2015 (2015-04-16), pages 972 - 977, XP035484096, DOI: 10.3938/jkps.66.972
S. VAN BEEK: "Four Point Probe Ramped Voltage Stress as an Efficient Method to Understand Breakdown of STT-MRAM MgO Tunnel Junctions", 2015 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, 19 April 2015 (2015-04-19), XP032780872, DOI: 10.1109/IRPS.2015.7112818
JUNG-MIN LEE: "Thickness and Temperature Dependences of the degradation and the breakdown for MgO-based Magnetic Tunnel Junctions", JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 16 April 2015 (2015-04-16), pages 972 - 977, XP035484096, DOI: 10.3938/jkps.66.972
Attorney, Agent or Firm:
KIM, Jeong Hoon (KR)
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