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Patent Searching and Data


Title:
METHOD FOR TEXTURING SILICON SURFACES AND WAFERS THEREOF
Document Type and Number:
WIPO Patent Application WO/2009/113874
Kind Code:
A3
Abstract:
This invention relates to a method for texturing a silicon surface and silicon wafers made by the method, where the method comprises immersing the wafers in an alkaline solution at pH > 10, and applying a potential difference between the wafer and a platinum electrode in the electrolyte in the range of + 10 to + 85 V.

Inventors:
OLEFJORD INGEMAR (SE)
LOMMASSON TIMOTHY C (NO)
Application Number:
PCT/NO2009/000092
Publication Date:
July 08, 2010
Filing Date:
March 12, 2009
Export Citation:
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Assignee:
NORUT NARVIK AS (NO)
REC SOLAR AS (NO)
OLEFJORD INGEMAR (SE)
LOMMASSON TIMOTHY C (NO)
International Classes:
H01L31/0236; C25F3/12; H01L21/3063; H01L31/18
Foreign References:
US5445718A1995-08-29
US20060254928A12006-11-16
US6284670B12001-09-04
US20050148198A12005-07-07
US3078219A1963-02-19
Other References:
IZIDINOV S O ET AL: "Electrochemical and photoelectrochemical behaviour of the silicon electrode in acid and alkaline solutions", RUSSIAN JOURNAL OF PHYSICAL CHEMISTRY, CHEMICAL SOCIETY, LONDON, GB, vol. 36, 1 June 1962 (1962-06-01), pages 659 - 664, XP009133224, ISSN: 0036-0244
FAUST J W JR ET AL: "Study of the orientation dependent etching and initial anodization of Si in aqueous KOH", JOURNAL OF THE ELECTROCHEMICAL SOCIETY, ELECTROCHEMICAL SOCIETY. MANCHESTER, NEW HAMPSHIRE, US, vol. 130, no. 6, 1 June 1983 (1983-06-01), pages 1413 - 1420, XP009133283, ISSN: 0013-4651
ZHANG X G ET AL: "Porous Silicon Formation and Electropolishing of Silicon by Anodic Polarization in HF Solution", JOURNAL OF THE ELECTROCHEMICAL SOCIETY,, vol. 136, no. 5, 1 May 1989 (1989-05-01), pages 1561 - 1565, XP002574121
Attorney, Agent or Firm:
ONSAGERS AS et al. (OSLO, NO)
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