Title:
METHOD FOR VAPOR-PHASE GROWTH OF PHASE-CHANGE THIN FILM, AND DEVICE FOR VAPOR-PHASE GROWTH OF PHASE-CHANGE THIN FILM
Document Type and Number:
WIPO Patent Application WO/2015/145746
Kind Code:
A1
Abstract:
Provided are a method for vapor-phase growth of a phase-change thin film, and a device for vapor-phase growth of a phase-change thin film, with which a phase-change thin film is formed at low temperature while retained in an amorphous state, in order to form a phase-change thin film that is flat at the nanometer level and has excellent coverage, which is necessary to obtain a three-dimensional, ULSI phase-change memory. In order to form films at low temperature in the present invention, a structure is provided in which an ammonia cracker into which nitrogen radicals obtained by decomposing ammonia are introduced is connected to the reactor of a vapor-phase growth device, and organometals on the front surface of a substrate are decomposed at low temperature. With this device it is possible to obtain a completely amorphous film in which the front surface is flat at the nanometer order, using an amine complex as a Ge raw material at the low temperature of 135°C. It is also possible to form a film at low temperature and with good coverage for a three-dimensional structure.
Inventors:
FUJISAKI YOSHIHISA (JP)
SASAGO YOSHITAKA (JP)
KOBAYASHI TAKASHI (JP)
SASAGO YOSHITAKA (JP)
KOBAYASHI TAKASHI (JP)
Application Number:
PCT/JP2014/059219
Publication Date:
October 01, 2015
Filing Date:
March 28, 2014
Export Citation:
Assignee:
HITACHI LTD (JP)
International Classes:
H01L21/205; C23C16/34; C23C16/452; C23C16/455; H01L27/105; H01L45/00
Foreign References:
| JP2010059546A | 2010-03-18 | |||
| JP2009133003A | 2009-06-18 | |||
| JP2011071380A | 2011-04-07 |
Attorney, Agent or Firm:
SEIRYO I. P. C. (JP)
青稜 patent business corporation (JP)
青稜 patent business corporation (JP)
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