Title:
METHOD FOR WASHING POLYCRYSTALLINE SILICON, WASHING DEVICE, AND METHOD FOR PRODUCING POLYCRYSTALLINE SILICON
Document Type and Number:
WIPO Patent Application WO/2010/073725
Kind Code:
A1
Abstract:
Provided is a method for washing polycrystalline silicon comprising an acid rinsing step in which an acidic solution is used and a water rinsing step in which purified water is used after the acid rinsing. In the water rinsing step, the polycrystalline silicon is immersed in a water rinsing tank holding purified water and the purified water inside the water rinsing tank is replaced at least once in order to remove the acidic solution residue from the surface of the polycrystalline silicon. The electrical conductivity (C) of the purified water in the water rinsing tank is measured and the water rinsing step is judged to be completed on the basis of the measured electric conductivity (C).
Inventors:
SAKAI, Kazuhiro (Yokkaichi Plant 5, Mita-cho, Yokkaichi-sh, Mie 41, 〒5100841, JP)
Application Number:
JP2009/007311
Publication Date:
July 01, 2010
Filing Date:
December 25, 2009
Export Citation:
Assignee:
MITSUBISHI MATERIALS CORPORATION (3-2 Otemachi 1-chome, Chiyoda-ku Tokyo, 17, 〒1008117, JP)
三菱マテリアル株式会社 (〒17 東京都千代田区大手町一丁目３番２号 Tokyo, 〒1008117, JP)
三菱マテリアル株式会社 (〒17 東京都千代田区大手町一丁目３番２号 Tokyo, 〒1008117, JP)
International Classes:
C30B29/06; B08B3/08
Attorney, Agent or Firm:
SHIGA, Masatake et al. (1-9-2, Marunouchi Chiyoda-k, Tokyo 20, 〒1006620, JP)
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