Title:
METHOD FOR WASHING POLYCRYSTALLINE SILICON, WASHING DEVICE, AND METHOD FOR PRODUCING POLYCRYSTALLINE SILICON
Document Type and Number:
WIPO Patent Application WO/2010/073725
Kind Code:
A1
Abstract:
Provided is a method for washing polycrystalline silicon comprising an acid rinsing step in which an acidic solution is used and a water rinsing step in which purified water is used after the acid rinsing. In the water rinsing step, the polycrystalline silicon is immersed in a water rinsing tank holding purified water and the purified water inside the water rinsing tank is replaced at least once in order to remove the acidic solution residue from the surface of the polycrystalline silicon. The electrical conductivity (C) of the purified water in the water rinsing tank is measured and the water rinsing step is judged to be completed on the basis of the measured electric conductivity (C).
Inventors:
SAKAI KAZUHIRO (JP)
Application Number:
PCT/JP2009/007311
Publication Date:
July 01, 2010
Filing Date:
December 25, 2009
Export Citation:
Assignee:
MITSUBISHI MATERIALS CORP (JP)
SAKAI KAZUHIRO (JP)
SAKAI KAZUHIRO (JP)
International Classes:
C30B29/06; B08B3/08
Foreign References:
| JP2005288333A | 2005-10-20 | |||
| JPH08164304A | 1996-06-25 | |||
| JP2002289575A | 2002-10-04 | |||
| JP2008303142A | 2008-12-18 | |||
| JP2008143774A | 2008-06-26 | |||
| JP2000302594A | 2000-10-31 | |||
| JP2002293688A | 2002-10-09 | |||
| CN1947869A | 2007-04-18 |
Other References:
See also references of EP 2381017A4
Attorney, Agent or Firm:
SHIGA, Masatake et al. (JP)
Masatake Shiga (JP)
Masatake Shiga (JP)
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