METHOD FOR WRITING TO RESISTANCE-CHANGE NON-VOLATILE MEMORY ELEMENTS, AND RESISTANCE-CHANGE NON-VOLATILE MEMORY DEVICE

WIPO Patent Application WO/2010/125805

A1

Provided is a method for writing data to a resistance-change element (10a) that can reversibly transition between a high-resistance state and a low-resistance state depending on the polarity of an applied voltage. Even for a resistance-change element for which a half low-resistance state can occur, said method can restore the element to a normal low-resistance state and secure a maximum resistance-change window. The method includes: a resistance-raising write step (405) that sets the resistance-change element (10a) to a high-resistance state (401) by applying a positive voltage; resistance-lowering write steps (406 and 408) that set the resistance-change element (10a) to low-resistance states (403 and 402) by applying negative voltages; and a low-resistance stabilization write step (404) that moves the resistance-change element (10a) through a low-resistance state to a high-resistance state (401) by applying a positive voltage after a negative voltage had been applied in one of the resistance-lowering write steps (408). The abovementioned voltages are applied to an upper electrode (11), and the polarities of said voltages are given with respect to a lower electrode (14t).

AZUMA RYOTARO
SHIMAKAWA KAZUHIKO
MURAOKA SHUNSAKU
KAWAI KEN

PCT/JP2010/003015

November 04, 2010

April 27, 2010

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PANASONIC CORP (JP)
AZUMA RYOTARO
SHIMAKAWA KAZUHIKO
MURAOKA SHUNSAKU
KAWAI KEN

G11C13/00; H01L27/10; H01L45/00; H01L49/00

WO2007013174A1

2007-02-01

JP2007226883A	2007-09-06
JP2008210441A	2008-09-11
JP2006155700A	2006-06-15

NII, Hiromori (JP)
New house extensive 守 (JP)

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