Title:
METHODS AND APPARATUS FOR IN SITU SUBSTRATE TEMPERATURE MONITORING BY ELECTROMAGNETIC RADIATION EMISSION
Document Type and Number:
WIPO Patent Application WO2004015157
Kind Code:
A3
Abstract:
A method in a plasma processing system of determining the temperature of a substrate. The method includes providing a substrate comprising a set of materials, wherein the substrate being configured to absorb electromagnetic radiation comprising a first set of electromagnetic frequencies, to convert the first set of electromagnetic frequencies to a set of thermal vibrations, and to transmit a second set of electromagnetic frequencies. The method also includes positioning the substrate on a substrate support structure, wherein the substrate support structure includes a chuck; flowing an etchant gas mixture into a plasma reactor of the plasma processing system; and striking the etchant gas mixture to create a plasma, wherein the plasma comprises the first set of electromagnetic frequencies. The method further includes processing the substrate with the plasma thereby generating the second set of electromagnetic frequencies; calculating a magnitude of the second set of electromagnetic frequencies; and converting the magnitude to a temperature value.
Inventors:
MAGNI ENRICO (US)
Application Number:
PCT/US2003/025524
Publication Date:
April 01, 2004
Filing Date:
August 13, 2003
Export Citation:
Assignee:
LAM RES CORP (US)
MAGNI ENRICO (US)
MAGNI ENRICO (US)
International Classes:
G01J5/00; G01J5/60; H01J37/32; H01L21/3065; (IPC1-7): C23C16/52; C23C16/02; G01J5/60; H01L21/66
Foreign References:
US5564830A | 1996-10-15 | |||
EP1124255A2 | 2001-08-16 | |||
US6352870B1 | 2002-03-05 | |||
US5549756A | 1996-08-27 | |||
US4959244A | 1990-09-25 | |||
EP0685720A1 | 1995-12-06 | |||
US6328802B1 | 2001-12-11 |
Other References:
MULLER R: "CONTROL OF A REACTIVE ION ETCHING PROCESS FOR INP AND RELATED MATERIALS BY IN SITU ELLIPSOMETRY IN THE NEAR INFRA RED", PROCEEDINGS OF THE INDIUM PHOSPHIDE AND RELATED MATERIALS CONFERENCE. DENVER, APR. 23 - 25, 1990, NEW YORK, IEEE, US, vol. 1 CONF. 2, 23 April 1990 (1990-04-23), pages 211 - 214, XP000170222
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