Title:
METHODS FOR FORMING A CONDUCTIVE MATERIAL, METHODS FOR SELECTIVELY FORMING A CONDUCTIVE MATERIAL, METHODS FOR FORMING PLATINUM, AND METHODS FOR FORMING CONDUCTIVE STRUCTURES
Document Type and Number:
WIPO Patent Application WO/2010/059434
Kind Code:
A3
Abstract:
Methods of selectively forming a conductive material and methods of forming metal conductive structures are disclosed. An organic material may be patterned to expose regions of an underlying material. The underlying material may be exposed to a precursor gas, such as a platinum precursor gas, that reacts with the underlying material without reacting with the remaining portions of the organic material located over the underlying material. The precursor gas may be used in an atomic layer deposition process, during which the precursor gas may selectively react with the underlying material to form a conductive structure, but not react with the organic material. The conductive structures may be used, for example, as a mask for patterning during various stages of semiconductor device fabrication.
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Inventors:
MARSH EUGENE P (US)
Application Number:
PCT/US2009/063440
Publication Date:
July 29, 2010
Filing Date:
November 05, 2009
Export Citation:
Assignee:
MICRON TECHNOLOGY INC (US)
MARSH EUGENE P (US)
MARSH EUGENE P (US)
International Classes:
H01L21/3205
Foreign References:
| JP2005347472A | 2005-12-15 | |||
| US20020115284A1 | 2002-08-22 | |||
| US20040147103A1 | 2004-07-29 | |||
| US6861693B2 | 2005-03-01 |
Other References:
See also references of EP 2351071A4
Attorney, Agent or Firm:
HARRACH, Tracey et al. (230 South 500 East Suite 300,P.O. Box 255, Salt Lake City Utah, US)
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