METHODS OF FORMING SEMICONDUCTOR MESA STRUCTURES INCLUDING SELF-ALIGNED CONTACT LAYERS AND RELATED DEVICES

Title:

METHODS OF FORMING SEMICONDUCTOR MESA STRUCTURES INCLUDING SELF-ALIGNED CONTACT LAYERS AND RELATED DEVICES

Document Type and Number:

WIPO Patent Application WO2004059751

Kind Code:

A3

Abstract:

A method of forming a semiconductor device may include forming a semiconductor layer on a substrate, and forming a contact layer on the semiconductor layer opposite the substrate. After forming the semiconductor layer and the contact layer, the contact layer and the semiconductor layer may be patterned such that the semiconductor layer includes a mesa having a mesa surface opposite the substrate and mesa sidewalls between the mesa surface and the substrate and so that the patterned contact layer is on the mesa surface. Related structures and devices are also discussed.

Inventors:

HABERERN KEVIN W (US)
SHERRICK SHEILA (US)
SHEPPARD SCOTT T (US)

Application Number:

PCT/US2003/040379

Publication Date:

September 30, 2004

Filing Date:

December 18, 2003

Export Citation:

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Assignee:

CREE INC (US)
HABERERN KEVIN W (US)
SHERRICK SHEILA (US)
SHEPPARD SCOTT T (US)

International Classes:

C30B1/00; H01L21/00; H01L33/14; H01S5/042; H01S5/22; H01S5/223; H01S5/323; H01S5/227; (IPC1-7): H01L33/00; H01S5/00

Foreign References:

US4142160A	1979-02-27
US4053914A	1977-10-11
US4032944A	1977-06-28
GB1223196A	1971-02-24
GB406665A	1934-02-28
US20030006425A1	2003-01-09

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