Title:
METHODS OF MAKING VERTICAL JUNCTION FIELD EFFECT TRANSISTORS AND BIPOLAR JUNCTION TRANSISTORS WITHOUT ION IMPLANTATION AND DEVICES MADE THEREWITH
Document Type and Number:
WIPO Patent Application WO/2010/148271
Kind Code:
A3
Abstract:
Methods of making semiconductor devices such as vertical junction field effect transistors (VJFETs) or bipolar junction transistors (BJTs) are described. The methods do not require ion implantation. The VJFET device has an epitaxially regrown n-type channel layer and an epitaxially regrown p-type gate layer as well as an epitaxially grown buried gate layer. Devices made by the methods are also described.
Inventors:
CHENG LIN (US)
Application Number:
PCT/US2010/039114
Publication Date:
February 24, 2011
Filing Date:
June 18, 2010
Export Citation:
Assignee:
SEMISOUTH LAB INC (US)
CHENG LIN (US)
CHENG LIN (US)
International Classes:
H01L29/73; H01L21/311; H01L29/732
Domestic Patent References:
| WO2007018578A2 | 2007-02-15 |
Foreign References:
| KR20070062969A | 2007-06-18 | |||
| US6278143B1 | 2001-08-21 |
Other References:
See also references of EP 2443658A4
Attorney, Agent or Firm:
RAIMUND, Christopher W. (NWSuite 82, Washington DC, US)
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