Title:
METHODS OF MANUFACTURING THIN FILM TRANSISTOR DEVICES
Document Type and Number:
WIPO Patent Application WO/2013/009505
Kind Code:
A3
Abstract:
Embodiments of the disclosure provide methods of fabricating a thin film transistor device with good profile control of peripheral sidewall of an active layer formed in the thin film transistor devices. In one embodiment, a method for manufacturing a thin film transistor device includes providing a substrate having a source-drain metal electrode layer disposed on an active layer formed thereon, wherein the active layer is a metal oxide layer, performing a back-channel-etching process to form a channel in the source-drain metal electrode layer, and performing an active layer patterning process after the back-channel-etching process.
Inventors:
YIM DONG-KIL (KR)
Application Number:
PCT/US2012/045053
Publication Date:
March 07, 2013
Filing Date:
June 29, 2012
Export Citation:
Assignee:
APPLIED MATERIALS INC (US)
YIM DONG-KIL (KR)
YIM DONG-KIL (KR)
International Classes:
H01L21/336; H01L29/786
Domestic Patent References:
| WO2009018509A1 | 2009-02-05 |
Foreign References:
| US20100001272A1 | 2010-01-07 | |||
| US20100163863A1 | 2010-07-01 | |||
| US20100176399A1 | 2010-07-15 |
Attorney, Agent or Firm:
PATTERSON, B. Todd et al. (L.L.P.3040 Post Oak Blvd., Suite 150, Houston Texas, US)
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