Title:
METHODS FOR POLYSILICON CHARACTERIZATION
Document Type and Number:
WIPO Patent Application WO/2020/252727
Kind Code:
A1
Abstract:
Aspects of the disclosure provide methods for polysilicon characterization. The method includes receiving image data of a polysilicon structure formed on a sample substrate. The image data is in a spatial domain and is generated by transmission electron microscopy (TEM). Further, the method includes extracting frequency spectrum of the image data in a frequency domain. Then, the method includes selecting a subset of the frequency spectrum that corresponds to characteristic of first crystal grains that are of a first orientation, and transforming the selected subset of the frequency spectrum to the spatial domain to construct a first spatial image for the first crystal grains of the first orientation.
Inventors:
LIU JUNZHAN (CN)
SHEN CHAO (CN)
XIA ZHILIANG (CN)
WEI QIANGMIN (CN)
LI LEI (CN)
SONG HAI (CN)
WANG BINGGUO (CN)
SHEN CHAO (CN)
XIA ZHILIANG (CN)
WEI QIANGMIN (CN)
LI LEI (CN)
SONG HAI (CN)
WANG BINGGUO (CN)
Application Number:
PCT/CN2019/092006
Publication Date:
December 24, 2020
Filing Date:
June 20, 2019
Export Citation:
Assignee:
YANGTZE MEMORY TECH CO LTD (CN)
International Classes:
G01N23/04; G01N23/18; G01N23/20; H01L21/66
Domestic Patent References:
| WO2017074577A1 | 2017-05-04 |
Foreign References:
| CN109300878A | 2019-02-01 | |||
| JP2000065762A | 2000-03-03 | |||
| CN105976349A | 2016-09-28 | |||
| JP2001147206A | 2001-05-29 |
Attorney, Agent or Firm:
NTD UNIVATION INTELLECTUAL PROPERTY AGENCY LTD. (CN)
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