Title:
METHODS FOR PROCESSING SEMICONDUCTOR WAFERS HAVING A POLYCRYSTALLINE FINISH
Document Type and Number:
WIPO Patent Application WO/2016/196216
Kind Code:
A8
Abstract:
A method of processing a semiconductor wafer includes depositing a silicon layer on the semiconductor wafer. The silicon layer has a substantially uniform thickness. The silicon layer is polished to smooth the silicon layer such that the thickness is substantially uniform after polishing.
Inventors:
CROOKS MARK S (US)
RAGAN TRACY M (US)
ZHANG GUOQIANG D (US)
RAGAN TRACY M (US)
ZHANG GUOQIANG D (US)
Application Number:
PCT/US2016/034428
Publication Date:
December 14, 2017
Filing Date:
May 26, 2016
Export Citation:
Assignee:
SUNEDISON SEMICONDUCTOR LTD (SG)
International Classes:
H01L21/321
Attorney, Agent or Firm:
MUNSELL, Michael G. et al. (US)
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