Title:
METHODS OF REDUCING PROGRAM DISTURB BY ARRAY SOURCE COUPLING IN 3D NAND MEMORY DEVICES
Document Type and Number:
WIPO Patent Application WO/2022/256956
Kind Code:
A1
Abstract:
A three-dimensional NAND memory device is provided, comprising a first NAND string including a first channel corresponding to a first cell to be inhibited to program, and a controller configured to control a word line driver and a bit line driver to do the following operations: prior to applying a program voltage to a selected word line, charging a first bit line electrically coupling with the first channel to a first voltage level for charging the first channel to the first voltage level, charging an array common source electrically coupling with the first bit line for further charging the first channel to a second voltage level higher than the first voltage level, and cutting off the electrical coupling between the first bit line and the first channel for preparing to apply the program voltage to the selected word line.
Inventors:
WAN WEIJUN (CN)
HOU CHUNYUAN (CN)
HOU CHUNYUAN (CN)
Application Number:
PCT/CN2021/098557
Publication Date:
December 15, 2022
Filing Date:
June 07, 2021
Export Citation:
Assignee:
YANGTZE MEMORY TECH CO LTD (CN)
International Classes:
G11C16/04; G11C16/08; G11C16/12; G11C16/24
Foreign References:
| CN102037516A | 2011-04-27 | |||
| CN112634961A | 2021-04-09 | |||
| CN112639978A | 2021-04-09 | |||
| CN101727986A | 2010-06-09 | |||
| US6639842B1 | 2003-10-28 | |||
| US20030161182A1 | 2003-08-28 |
Attorney, Agent or Firm:
NTD UNIVATION INTELLECTUAL PROPERTY AGENCY LTD. (CN)
Download PDF:
Previous Patent: METAL-INSULATOR-METAL CAPACITOR INSERTION
Next Patent: POLYURETHANE COATED POLYOLEFIN FILM AND METHOD FOR MAKING IT
Next Patent: POLYURETHANE COATED POLYOLEFIN FILM AND METHOD FOR MAKING IT