Title:
MICRO LASER DIODE TRANSFER METHOD AND MANUFACTURING METHOD
Document Type and Number:
WIPO Patent Application WO/2018/102961
Kind Code:
A1
Abstract:
A micro laser diode transfer method and a manufacturing method comprise: forming a bonding layer (515) on a receiving substrate (513), wherein first type electrodes (514) are connected to the bonding layer (515); bringing a first side of the micro laser diodes (500r) on a carrier substrate (520) into contact with the bonding layer (515), wherein the carrier substrate (520) is laser-transparent; and irradiating selected micro laser diodes (500r) with laser from the side of the carrier substrate (520) to lift-off the selected micro laser diodes (500r) from the carrier substrate (520). This method may improve yield.
Inventors:
ZOU QUANBO (CN)
WANG ZHE (CN)
WANG ZHE (CN)
Application Number:
PCT/CN2016/108557
Publication Date:
June 14, 2018
Filing Date:
December 05, 2016
Export Citation:
Assignee:
GOERTEK INC (CN)
International Classes:
H01L33/00; H01S5/0239
Foreign References:
| CN106170849A | 2016-11-30 | |||
| CN105493297A | 2016-04-13 | |||
| CN105493298A | 2016-04-13 | |||
| CN105723528A | 2016-06-29 | |||
| CN105870265A | 2016-08-17 | |||
| US20090217517A1 | 2009-09-03 | |||
| CN104836117A | 2015-08-12 |
Attorney, Agent or Firm:
BEYOND TALENT PATENT AGENT FIRM (CN)
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