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Title:
MICRO LIGHT-EMITTING DIODE, MICRO LIGHT-EMITTING ELEMENT AND PREPARATION METHOD THEREFOR, AND DISPLAY
Document Type and Number:
WIPO Patent Application WO/2024/044909
Kind Code:
A1
Abstract:
Disclosed in the present invention are a micro light-emitting diode, a micro light-emitting element and a preparation method therefor, and a display. The micro light-emitting element comprises a substrate, and at least one micro light-emitting diode which is arranged on the substrate. The micro light-emitting diode comprises: a semiconductor epitaxial stack, which comprises a first-type semiconductor layer, an active layer and a second-type semiconductor layer that are arranged in sequence, and has a first surface and a second surface that are opposite to each other, the first surface being close to one side of the first-type semiconductor layer, the second surface being close to one side of the second type semiconductor layer, and the first surface being close to the substrate; and an adhesive film layer, which is located between the substrate and the first surface of the semiconductor epitaxial stack. The micro light-emitting element is characterized in that an etching protection layer is arranged between the adhesive film layer and the first surface of the semiconductor epitaxial stack. The present invention can reduce damages to semiconductor epitaxial stacks during the residual adhesive removing process after laser stripping of micro light-emitting diodes, thus improving the reliability of micro light-emitting elements.

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Inventors:
WANG YANQIN (CN)
WANG JING (CN)
CHEN JINHUA (CN)
GUO HUANSHAO (CN)
PENG YUREN (CN)
Application Number:
PCT/CN2022/115586
Publication Date:
March 07, 2024
Filing Date:
August 29, 2022
Export Citation:
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Assignee:
TIANJIN SANAN OPTOELECTRONICS CO LTD (CN)
International Classes:
H01L33/44; H01L25/075; H01L33/22
Foreign References:
CN114388668A2022-04-22
CN114864784A2022-08-05
CN114038953A2022-02-11
EP3823030A12021-05-19
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