Title:
MICRO LIGHT-EMITTING DIODE AND MANUFACTURING METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2021/212336
Kind Code:
A1
Abstract:
The present invention relates to the field of light-emitting diodes. A micro light-emitting diode comprises a first semiconductor layer, an active layer and a second semiconductor layer which are sequentially stacked; the first semiconductor layer and the second semiconductor layer are different types of semiconductor layers, the active layer comprises a first quantum well layer and a second quantum well layer which are sequentially stacked; nanoring structures are formed on the second quantum well layer and the second semiconductor layer, the first quantum well layer emits light of a first color, portions of the second quantum well layer that correspond to side walls of the nanorings emit light of a second color, the first color is different from the second color, a first electrode is electrically connected to the first semiconductor layer, and a second electrode is electrically connected to the second semiconductor layer. The present invention further comprises a manufacturing method for the micro light-emitting diode, and manufacturing nanorings by using nano-silicon dioxide particles as a photomask will release the original quantum well stress, such that the quantum confined Stark effect is reduced to generate blue light.
Inventors:
HUANG KUO-TUNG (CN)
LIN YA-WEN (CN)
HUANG CHIA-HUNG (CN)
LIN YA-WEN (CN)
HUANG CHIA-HUNG (CN)
Application Number:
PCT/CN2020/085967
Publication Date:
October 28, 2021
Filing Date:
April 21, 2020
Export Citation:
Assignee:
CHONGQING KONKA PHOTOELECTRIC TECH RESEARCH INSTITUTE CO LTD (CN)
International Classes:
H01L33/06; H01L33/08; H01L33/14; H01L33/20; H01L33/32
Foreign References:
| CN109841711A | 2019-06-04 | |||
| CN110571312A | 2019-12-13 | |||
| CN109817792A | 2019-05-28 | |||
| US20160300978A1 | 2016-10-13 |
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