Title:
MICRO LIGHT-EMITTING DIODE WITH DIELECTRIC FRAME, AND PREPARATION METHOD FOR MICRO LIGHT-EMITTING DIODE
Document Type and Number:
WIPO Patent Application WO/2024/074103
Kind Code:
A1
Abstract:
A micro light-emitting diode (LED) (1, 1', 2, 3, 4) with a dielectric frame (12, 12', 22, 32, 42), and a preparation method for the micro-LED. The micro-LED (1, 1', 2, 3, 4) comprises: an n-type doped layer (13, 13', 23, 33, 43), which is epitaxial on an epitaxial substrate (11, 11', 21, 31, 41); a dielectric frame (12, 12', 22, 32, 42), which is formed on the epitaxial substrate (11, 11', 21, 31, 41) or the n-type doped layer (13, 13', 23, 33, 43); a multi-quantum-well layer (14, 14', 24, 34, 44), which is grown in the dielectric frame (12, 12', 22, 32, 42) and is located on the n-type doped layer (13, 13', 23, 33, 43); a p-type doped layer (15, 15', 25, 35, 45), which is grown in the dielectric frame (12, 12', 22, 32, 42) and is located on the multi-quantum-well layer (14, 14', 24, 34, 44); a first metal electrode (17, 17', 27, 37, 47), which is connected to the p-type doped layer (15, 15', 25, 35, 45) in a conducted manner; a second metal electrode (18, 18', 28, 38, 48), which is connected to the n-type doped layer (13, 13', 23, 33, 43) or the epitaxial substrate (11, 11', 21, 31, 41) in a conducted manner; and a protection layer (19, 19', 29, 39, 49), which covers the outer surfaces of the dielectric frame (12, 12', 22, 32, 42) and a transparent current dispersion layer (16, 16', 26, 36, 46) and exposes the first metal electrode (17, 17', 27, 37, 47) and the second metal electrode (18, 18', 28, 38, 48). The present application effectively avoids defects caused by mesa etch, and solves, from the source, the problem of the EQE of a micro-LED being rapidly reduced, thereby effectively improving the light emission efficiency of the micro-LED.
Inventors:
WANG HSIAO LEI (CN)
SHIH NENG TAI (CN)
SUNG KAO MEI (CN)
SHIH NENG TAI (CN)
SUNG KAO MEI (CN)
Application Number:
PCT/CN2023/121427
Publication Date:
April 11, 2024
Filing Date:
September 26, 2023
Export Citation:
Assignee:
WANG HSIAO LEI (CN)
International Classes:
H01L33/12
Attorney, Agent or Firm:
XIAMEN TIAN FUQIN INTELLECTUAL PROPERTY AGENCY FIRM (CN)
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