Title:
MICROELECTRONIC STRUCTURE COMPRISING A HYDROGEN BARRIER LAYER
Document Type and Number:
WIPO Patent Application WO2002091432
Kind Code:
A3
Abstract:
The invention relates to a microelectronic structure, which provides improved protection of a hydrogen-sensitive dielectric against hydrogen contamination. According to the invention, the hydrogen-sensitive dielectric (14) is covered at least by an intermediate oxide (18), whose material thickness is at least five times the thickness of the hydrogen-sensitive dielectric. The intermediate oxide (18) simultaneously acts as an intermetal dielectric and is metallized on its surface for this purpose. The intermediate oxide (18), which has a sufficient thickness, absorbs the hydrogen that may be released during the deposition of a hydrogen barrier layer (22, 26), thus protecting the hydrogen-sensitive dielectric (14).
Inventors:
HARTNER WALTER (US)
GABRIC ZVONIMIR (DE)
KROENKE MATTHIAS (DE)
SCHINDLER GUENTHER (DE)
GABRIC ZVONIMIR (DE)
KROENKE MATTHIAS (DE)
SCHINDLER GUENTHER (DE)
Application Number:
PCT/EP2002/004422
Publication Date:
May 01, 2003
Filing Date:
April 22, 2002
Export Citation:
Assignee:
INFINEON TECHNOLOGIES AG (DE)
HARTNER WALTER (US)
GABRIC ZVONIMIR (DE)
KROENKE MATTHIAS (DE)
SCHINDLER GUENTHER (DE)
HARTNER WALTER (US)
GABRIC ZVONIMIR (DE)
KROENKE MATTHIAS (DE)
SCHINDLER GUENTHER (DE)
International Classes:
H01L21/02; H01L21/822; H01L27/04; H01L21/8242; H01L21/8246; H01L23/00; H01L27/105; H01L27/108; H01L27/115; H01L27/11502; (IPC1-7): H01L21/768; H01L21/02
Domestic Patent References:
| WO2000046843A1 | 2000-08-10 |
Foreign References:
| US6121083A | 2000-09-19 | |||
| EP0642167A2 | 1995-03-08 | |||
| US5481490A | 1996-01-02 | |||
| US6249014B1 | 2001-06-19 | |||
| US20010021554A1 | 2001-09-13 |
Other References:
PATENT ABSTRACTS OF JAPAN vol. 2000, no. 16 8 May 2001 (2001-05-08)
HONG S-K ET AL: "PROTECTION OF SRBI2TA2O9 FERROELECTRIC CAPACITORS FROM HYDROGEN DAMAGE BY OPTIZIMED METALLIZATION FOR MEMORY APPLICATIONS", APPLIED PHYSICS LETTERS, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, vol. 77, no. 1, 3 July 2000 (2000-07-03), pages 76 - 78, XP000958517, ISSN: 0003-6951
PATENT ABSTRACTS OF JAPAN vol. 1998, no. 03 27 February 1998 (1998-02-27)
PATENT ABSTRACTS OF JAPAN vol. 1998, no. 13 30 November 1998 (1998-11-30)
PATENT ABSTRACTS OF JAPAN vol. 1999, no. 08 30 June 1999 (1999-06-30)
HONG S-K ET AL: "PROTECTION OF SRBI2TA2O9 FERROELECTRIC CAPACITORS FROM HYDROGEN DAMAGE BY OPTIZIMED METALLIZATION FOR MEMORY APPLICATIONS", APPLIED PHYSICS LETTERS, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, vol. 77, no. 1, 3 July 2000 (2000-07-03), pages 76 - 78, XP000958517, ISSN: 0003-6951
PATENT ABSTRACTS OF JAPAN vol. 1998, no. 03 27 February 1998 (1998-02-27)
PATENT ABSTRACTS OF JAPAN vol. 1998, no. 13 30 November 1998 (1998-11-30)
PATENT ABSTRACTS OF JAPAN vol. 1999, no. 08 30 June 1999 (1999-06-30)
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