Title:
MICROLITHOGRAPHY PROJECTION OBJECTIVE WITH CRYSTAL LENS
Document Type and Number:
WIPO Patent Application WO2005059618
Kind Code:
A3
Abstract:
Very high aperture microlithography projection objectives operating at the wavelengths of 248 nm, 193 nm and also 157 nm, suitable for optical immersion or near-field operation with aperture values that can exceed 1.4 are made feasible with crystalline lenses and crystalline end plates P of NaCl, KCl, KI, RbI, CsI, and MgO, YAG with refractive indices up to and above 2.0. These crystalline lenses and end plates are placed between the system aperture stop AS and the wafer W, preferably as the last lenses on the image side of the objective.
Inventors:
SCHUSTER KARL-HEINZ (DE)
CLAUSS WILFRIED (DE)
CLAUSS WILFRIED (DE)
Application Number:
PCT/EP2004/014290
Publication Date:
January 19, 2006
Filing Date:
December 15, 2004
Export Citation:
Assignee:
ZEISS CARL SMT AG (DE)
SCHUSTER KARL-HEINZ (DE)
CLAUSS WILFRIED (DE)
SCHUSTER KARL-HEINZ (DE)
CLAUSS WILFRIED (DE)
International Classes:
G02B13/14; G02B19/00; G03F7/20; (IPC1-7): G03F7/20
Foreign References:
| US20030174408A1 | 2003-09-18 | |||
| US20020102497A1 | 2002-08-01 | |||
| US4861148A | 1989-08-29 | |||
| US6025115A | 2000-02-15 | |||
| EP0475020A2 | 1992-03-18 |
Other References:
JOHN H. BURNETT ET AL.: "High Index Materials for 193nm and 157nm Immersion Lithography", INTERNATIONAL SEMATECH, 2 August 2004 (2004-08-02), International Symposium on Immersion & 157 nm Lithography, Vancouver, XP001207229
Download PDF:
Previous Patent: PROJECTION OBJECTIVE HAVING A HIGH APERTURE AND A PLANAR END SURFACE
Next Patent: DEVICE FOR THE PRODUCTION OF A LASER LIGHT BEAM
Next Patent: DEVICE FOR THE PRODUCTION OF A LASER LIGHT BEAM