Title:
MICROSTRUCTURE ENHANCED ABSORPTION PHOTOSENSITIVE DEVICES
Document Type and Number:
WIPO Patent Application WO/2019/018846
Kind Code:
A3
Abstract:
Lateral and vertical micro structure enhanced photodetectors and avalanche photodetectors are monolithically integrated with CMOS/BiCMOS ASICs and can also be integrated with laser devices using fluidic assembly techniques. Photodetectors can be configured in a vertical PIN arrangement or lateral metal- semiconductor-metal arrangement where electrodes are in an inter-digitated pattern. Microstructures, such as holes and protrusions, can improve quantum efficiency in silicon, germanium and lll-V materials and can also reduce avalanche voltages for avalanche photodiodes. Applications include optical communications within and between datacenters, telecommunications, LIDAR, and free space data communication.
Inventors:
WANG SHIH-YUAN (US)
WANG SHIH-PING (US)
WANG SHIH-PING (US)
Application Number:
PCT/US2018/043289
Publication Date:
March 28, 2019
Filing Date:
July 23, 2018
Export Citation:
Assignee:
W&WSENS DEVICES INC (US)
International Classes:
G02B6/122; H01L31/105; G02B6/136; H01L27/144; H01L31/0232; H01L31/107
Foreign References:
| US20160307939A1 | 2016-10-20 | |||
| US20160254407A1 | 2016-09-01 | |||
| US20040222357A1 | 2004-11-11 | |||
| US5525828A | 1996-06-11 | |||
| US20020097962A1 | 2002-07-25 | |||
| US20150340538A1 | 2015-11-26 | |||
| US7605406B2 | 2009-10-20 |
Other References:
See also references of EP 3656000A4
Attorney, Agent or Firm:
KAVRUKOV, Ivan, S. (US)
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