Title:
MIM CAPACITOR AND MANUFACTURING METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2020/098581
Kind Code:
A1
Abstract:
An MIM capacitor and a manufacturing method therefor. The manufacturing method comprises: providing a semiconductor substrate, and forming a first metal layer on the semiconductor substrate; forming an anti-reflection layer on the first metal layer; performing photoetching and etching on the first metal layer and the anti-reflection layer so as to define an MIM capacitor region, wherein the first metal layer in the MIM capacitor region serves as a lower electrode plate of the MIM capacitor, and the anti-reflection layer in the MIM capacitor region serves as a dielectric layer of the MIM capacitor; and forming an upper electrode plate of the MIM capacitor on the anti-reflection layer in the MIM capacitor region.
Inventors:
JIN HONGFENG (CN)
Application Number:
PCT/CN2019/116996
Publication Date:
May 22, 2020
Filing Date:
November 11, 2019
Export Citation:
Assignee:
CSMC TECHNOLOGIES FAB2 CO LTD (CN)
International Classes:
H01L21/02; H01L29/92
Foreign References:
| CN101789429A | 2010-07-28 | |||
| CN106876371A | 2017-06-20 | |||
| CN1402325A | 2003-03-12 | |||
| CN102339869A | 2012-02-01 | |||
| US20170330931A1 | 2017-11-16 | |||
| US20170207298A1 | 2017-07-20 |
Attorney, Agent or Firm:
ADVANCE CHINA IP LAW OFFICE (CN)
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