Title:
MINIATURE FIELD PLATE T-GATE AND METHOD OF FABRICATING THE SAME
Document Type and Number:
WIPO Patent Application WO/2020/214227
Kind Code:
A3
Abstract:
A method of fabricating a gate with a mini field plate includes forming a dielectric passivation layer over an epitaxy layer on a substrate, coating the dielectric passivation layer with a first resist layer, etching the first resist layer and the dielectric passivation layer to form a first opening in the dielectric passivation layer, removing the first resist layer; and forming a tri-layer gate having a gate foot in the first opening, the gate foot having a first width, a gate neck extending from the gate foot and extending for a length over the dielectric passivation layer on both sides of the first opening, the gate neck having a second width wider than the first width of the gate foot, and a gate head extending from the gate neck, the gate head having a third width wider than the second width of the gate neck.
Inventors:
WONG JOEL (US)
MOON JEONG-SUN (US)
GRABAR ROBERT (US)
ANTCLIFFE MICHAEL (US)
MOON JEONG-SUN (US)
GRABAR ROBERT (US)
ANTCLIFFE MICHAEL (US)
Application Number:
PCT/US2020/015252
Publication Date:
January 21, 2021
Filing Date:
January 27, 2020
Export Citation:
Assignee:
HRL LAB LLC (US)
International Classes:
H01L21/28; H01L29/40; H01L29/66; H01L29/778
Domestic Patent References:
| WO2006080109A1 | 2006-08-03 |
Foreign References:
| US20150311084A1 | 2015-10-29 | |||
| US20130277680A1 | 2013-10-24 | |||
| US8049252B2 | 2011-11-01 | |||
| US20090159930A1 | 2009-06-25 |
Attorney, Agent or Firm:
TOWER, Lee, W. et al. (US)
Download PDF: