Title:
MINIATURIZED TERAHERTZ RADIATION SOURCE
Document Type and Number:
WIPO Patent Application WO2000072413
Kind Code:
A3
Abstract:
The invention relates to a miniaturized terahertz radiation source based on the Smith-Purcell effect. According to the invention, an energy-rich electron beam is emitted from a focused electron source at a defined distance across a metal grid of transversal grid rods so that oscillating image charges emit electromagnetic waves of a wavelength that can be adjusted on the basis of the periodicity of the webs and the electron speed. The elements of the radiation source such as the field emitter (1), the electrostatic lens (4), the beam deflector (5), the metal grid (7) and a second anode (8) are located on a semiconductor chip integrated by means of additive nanolithography methods. The field electron source is configured as a highly conductive wire with a stabilizing external resistor that is produced by additive nanolithography methods and protrudes from the surface. Said wire is produced by computer-controlled deposition lithography as a self-contained straight or arcuate structure. The base material, in its surface, has a track structure for the electrical connections and links (2) with controlled supply terminals (3) for supplying the field emitter tips (1), the lens (4) and the control electrodes (5, 8) with power. The terahertz radiation source according to the invention is powerful and can be used as a modular component irrespective of its spatial arrangement.
Inventors:
KOOPS HANS W P (DE)
BAUER TOBIAS (DE)
ELSAESSER WOLFGANG (DE)
FLOREANI FILIP (DE)
ROSKOS HARTMUT (DE)
BAUER TOBIAS (DE)
ELSAESSER WOLFGANG (DE)
FLOREANI FILIP (DE)
ROSKOS HARTMUT (DE)
Application Number:
PCT/EP2000/004167
Publication Date:
March 29, 2001
Filing Date:
May 10, 2000
Export Citation:
Assignee:
DEUTSCHE TELEKOM AG (DE)
KOOPS HANS W P (DE)
BAUER TOBIAS (DE)
ELSAESSER WOLFGANG (DE)
FLOREANI FILIP (DE)
ROSKOS HARTMUT (DE)
KOOPS HANS W P (DE)
BAUER TOBIAS (DE)
ELSAESSER WOLFGANG (DE)
FLOREANI FILIP (DE)
ROSKOS HARTMUT (DE)
International Classes:
H01J1/304; H01J3/02; H01J25/00; H01S3/09; H01S3/30; (IPC1-7): H01S3/09
Domestic Patent References:
| WO1998021788A1 | 1998-05-22 | |||
| WO1987001873A1 | 1987-03-26 |
Other References:
SCHOESSLER C ET AL: "Nanostructured integrated electron source", SILICON HETEROSTRUCTURES: FROM PHYSICS TO DEVICES, BARGA, ITALY, 16-19 SEPT. 1997, vol. 16, no. 2, Journal of Vacuum Science & Technology B (Microelectronics and Nanometer Structures), March-April 1998, AIP for American Vacuum Soc, USA, pages 862 - 865, XP000961592, ISSN: 0734-211X
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