MIXED SUBSTANTIALLY HOMOGENOUS COATINGS DEPOSITED BY ALD

Title:

MIXED SUBSTANTIALLY HOMOGENOUS COATINGS DEPOSITED BY ALD

Document Type and Number:

WIPO Patent Application WO/2021/262907

Kind Code:

A4

Abstract:

Disclosed herein are methods for the deposition of a plasma resistant coating onto a substrate using an atomic layer deposition process. The process includes carrying out a an ALD deposition cycle that includes at least the steps of: providing an ALD reactant chamber with a substrate; pulsing into the chamber a first coating precursor (Coat1Pre); pulsing into the chamber a second coating precursor (Coat2Pre), substantially immediately after the completion of the pulse of Coat1Pre; purging the chamber; pulsing into the chamber a co-reactant precursor; and purging the chamber. At completion of a cycle, a monolayer is deposited. The monolayer is or is included in a mixed coating of substantial homogeneity. The methods may be varied, e.g., the second or third steps can be repeated multiple times (1 to 4 times or 2 to 8 times). If one desired to prepare mixed coatings or more than two components, other steps may be added, e.g., at least one additional step of pulsing an additional metal precursor into the chamber substantially immediately after the completion of the pulse of the Coat1Pre or Coat2Pre. In such embodiments, the additional precursor(s) is not the same as Coat1Pre or Coat2Pre. Also included within the invention are coatings made by the disclosed processes (such as those having, e.g., without limitation, the mixed composition of YxAlyOz, YxZryOz, YxOyFz, and YxAlyZrzOw) and substrates (articles) bearing such coatings.

Inventors:

PAVEL ALEXANDRU (US)
VORSA VASIL (US)

Application Number:

PCT/US2021/038777

Publication Date:

March 31, 2022

Filing Date:

June 23, 2021

Export Citation:

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Assignee:

GREENE TWEED TECH INC (US)

International Classes:

C23C16/40; C23C16/455

Attorney, Agent or Firm:

BULLOCK, Kristyne A. et al. (US)

Download PDF:

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Claims:

AMENDED CLAIMS received by the International Bureau on 21 December 2021 (21.12.2021)

I S. The method of claim 1 wherein the substrate is a chamber component.

19. The method of claim 1 wherein the substrate is selected from a shower head, a chamber wall, a nozzle a plasma generation unit, a diffuser, a gas line interior, and a chamber orifice.

20. The method of claim 1 wherein the substrate is selected from a planar member and a 3D shape, a 3D shape with high aspect ratio features and a 3D shape with low aspect ratio features.

21. The method of claim 1, wherein purging is carried out using a nitrogen purge.

22. The method of claim 1 further comprising the preliminary step of forming al least one primer layer on the substrate before step (a).

23. The method of claim 22, wherein the primer layer is formed by a process selected from anodization, thermal spray, sputtering, vapor deposition and evaporation techniques.

24. The method of claim 22 wherein the primer layer is Formed by ALD.

25. The method of claim 1 wherein the mixed coating has a thickness of about I to about

2.50 nanometers.

26. The method of claim 1 wherein the mixed coating has a thickness of about 10 to about 5,000 nanometers.

27. The method of claim 1 wherein the mixed coating has a thickness of about 40 to about 60 nanometers.

28. The method of claim 1 wherein the mixed coating comprises a structure that is amorphous. 29. A plasma resistant coating comprising a monolayer prepared by the method of claim 1.

30. The coating of claim 29 having about 1 to about 100 monolayers.

31. The coating of claim 2.9 having a thickness of about 1 to about 250 manometers,

32. The coating of claim 29 wherein the mixed coating has a thickness of about 10 to about 5,000 manometers. 33. The coating of claim 29 wherein the mixed coating has a thickness of about 40 to about

60 manometers.

34. The coating of claim 29 comprising at least one monolayer that is substantially homogeneous.

35. A component comprising the multi-layer coating of claim 30. 36. The component of ciaim 35 selected from the group consisting of semiconductor manufacturing equipment, flat panel display manufacturing equipment, a shower head, a chamber wall, a nozzle a plasma generation unit, a diffuser, a gas line interior, and a chamber orifice, chamber liner, and chamber lid.

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