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Patent Searching and Data


Title:
MOCVD FABRICATION OF GROUP III-NITRIDE MATERIALS USING IN-SITU GENERATED HYDRAZINE OR FRAGMENTS THERE FROM
Document Type and Number:
WIPO Patent Application WO/2012/122365
Kind Code:
A3
Abstract:
The metal-organic chemical vapor deposition (MOCVD) fabrication of group III-nitride materials using in-situ generated hydrazine or fragments there from is described. For example, a method of fabricating a group III-nitride material includes forming hydrazine in an in-situ process. The hydrazine, or fragments there from, is reacted with a group ΙΠ precursor in a metal-organic chemical vapor deposition (MOCVD) chamber. From the reacting, a group III-nitride layer is formed above a substrate.

Inventors:
BROWN KARL (US)
GRIFFIN KEVIN (US)
BOUR DAVID (US)
KRYLIOUK OLGA (US)
Application Number:
PCT/US2012/028253
Publication Date:
November 22, 2012
Filing Date:
March 08, 2012
Export Citation:
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Assignee:
APPLIED MATERIALS INC (US)
BROWN KARL (US)
GRIFFIN KEVIN (US)
BOUR DAVID (US)
KRYLIOUK OLGA (US)
International Classes:
H01L21/205; H01L21/318
Foreign References:
US20100279020A12010-11-04
Other References:
JAMES W. MITCHELL ET AL.: "Microwave plasma in situ generation of nitride rea gents", MATERIALS LETTERS, vol. 60, no. IS.12, June 2006 (2006-06-01), pages 1524 - 1526
BALDUR ELIASSON ET AL.: "Nonequilibrium volume plasma chemical processing", IEEE TRANSACTIONS ON PLASMA SCIENCE, vol. 19, no. 6, December 1991 (1991-12-01), pages 1063 - 1077
SHIGEYUKI TANAKA ET AL.: "Synergistic effects of catalysts and plasmas on the synthesis of ammonia and hydrazine", PLASMA CHEMISTRY AND PLASMA PROCESSING, vol. 14, no. IS.4, December 1994 (1994-12-01), pages 491 - 504
Attorney, Agent or Firm:
VINCENT, Lester, J. et al. (Sokoloff Taylor & Zafman LLP,1279 Oakmead Parkwa, Sunnyvale CA, US)
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