Title:
MOLECULAR ION SOURCE FOR ION IMPLANTATION
Document Type and Number:
WIPO Patent Application WO/2013/068796
Kind Code:
A3
Abstract:
The present invention relates to the production of molecular phosphorous ion beams that can be used in low-energy ion implanters to manufacture semiconductor devices. More particularly, the present invention relates to the design and use of an ion source with a phosphine dissociator that can produce molecular P4 vapors from phosphine. The use of the gaseous phosphorous-hydrogen compound as a molecular P vapor source in combination with the dissociator speeds up the initiation and stabilization of injected gas into the discharge chamber from tens of minutes, in furnace (oven) fed systems, to seconds in the disclosed invention. The decomposition of phosphine into molecular phosphorous and hydrogen in the dissociator completely excludes the presence of P-H compounds at the output of the ion source, thus eliminating the problem of utilization of this toxic gas and simultaneously increasing the fraction of molecular P4 and P2 ions in the ion beam.
Inventors:
HERSHCOVITCH ADY (US)
GUSHENETS VASILIY (RU)
BUGAEV ALEXEY (RU)
KULEVOY TIMUR (RU)
OKS EFIM (RU)
GUSHENETS VASILIY (RU)
BUGAEV ALEXEY (RU)
KULEVOY TIMUR (RU)
OKS EFIM (RU)
Application Number:
PCT/IB2012/000830
Publication Date:
August 13, 2015
Filing Date:
March 16, 2012
Export Citation:
Assignee:
BROOKHAVEN SCIENCE ASS LLC (US)
HERSHCOVITCH ADY (US)
GUSHENETS VASILIY (RU)
BUGAEV ALEXEY (RU)
KULEVOY TIMUR (RU)
OKS EFIM (RU)
HERSHCOVITCH ADY (US)
GUSHENETS VASILIY (RU)
BUGAEV ALEXEY (RU)
KULEVOY TIMUR (RU)
OKS EFIM (RU)
International Classes:
C23C16/30; H01L21/205
Foreign References:
| US20090183679A1 | 2009-07-23 | |||
| US7838842B2 | 2010-11-23 | |||
| US7863582B2 | 2011-01-04 | |||
| US7107929B2 | 2006-09-19 | |||
| US7851773B2 | 2010-12-14 |
Other References:
APPLICANT ADMITTED PRIOR ART
GUSHENETS, V; ET AL.: "Enhanced beam currents of P2+, P3+, and P4+ for use in semiconductor ion implanters", REVIEW OF SCIENTIFIC INSTRUMENTS, vol. 76, 2005, pages 083301, XP002458159, Retrieved from the Internet
GUSHENETS, V; ET AL.: "Enhanced beam currents of P2+, P3+, and P4+ for use in semiconductor ion implanters", REVIEW OF SCIENTIFIC INSTRUMENTS, vol. 76, 2005, pages 083301, XP002458159, Retrieved from the Internet
Attorney, Agent or Firm:
SACK, Alan et al. (3 World Financial CenterNew York, NY, US)
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