Title:
MONOCRYSTAL PRODUCTION DEVICE
Document Type and Number:
WIPO Patent Application WO/2022/249614
Kind Code:
A1
Abstract:
A monocrystal production device according to the present invention is a monocrystal growth device for growing a monocrystal by the Czochralski method, and is provided with: a main chamber that houses a crucible in which a raw material melt is placed, and a heater for heating the raw material melt; a pull-up chamber that is disposed contiguously to an upper portion of the main chamber and into which a grown monocrystal is pulled up and stored; and a cooling cylinder that extends from at least a ceiling section of the main chamber toward the surface of the raw material melt so as to surround a monocrystal being pulled up and that is forcibly cooled by a cooling medium. The monocrystal production device is characterized by being provided with a first auxiliary cooling cylinder which is fitted to the inner side of the cooling cylinder, and a second auxiliary cooling cylinder screwed onto the outside of the first auxiliary cooling cylinder from below, and is characterized in that a gap between the bottom surface of the cooling cylinder and the upper surface of the second auxiliary cooling cylinder is 0-1.0 mm. As a result, it is possible to provide a monocrystal production device in which a monocrystal being grown can be efficiently cooled, and therefore, the growth rate of said monocrystal can be increased.
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Inventors:
TAKAHASHI HIROTAKA (JP)
MATSUMOTO SUGURU (JP)
ONAI TAKAHIDE (JP)
SUGAWARA KOSEI (JP)
MATSUMOTO SUGURU (JP)
ONAI TAKAHIDE (JP)
SUGAWARA KOSEI (JP)
Application Number:
PCT/JP2022/008417
Publication Date:
December 01, 2022
Filing Date:
February 28, 2022
Export Citation:
Assignee:
SHINETSU HANDOTAI KK (JP)
International Classes:
C30B15/00; C30B29/06
Foreign References:
JPH07206576A | 1995-08-08 | |||
JP2002121096A | 2002-04-23 | |||
CN208562590U | 2019-03-01 | |||
JP2003002780A | 2003-01-08 |
Attorney, Agent or Firm:
YOSHIMIYA Mikio et al. (JP)
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