Title:
MONOCRYSTALLINE GERMANIUM WAFERS, METHOD FOR PREPARING THE SAME, METHOD FOR PREPARING INGOTS AND USE OF MONOCRYSTALLINE WAFERS
Document Type and Number:
WIPO Patent Application WO/2019/109636
Kind Code:
A1
Abstract:
A monocrystalline germanium wafer that increases the open-circuit voltage of multijunction solar cells, a method for preparing the monocrystalline germanium wafer and a method for preparing an ingot from which the monocrystalline germanium wafer is prepared. The monocrystalline germanium wafer that increases the open-circuit voltage of the bottom cell of multijunction solar cells is prepared by adjusting the amounts of the co-dopants silicon and gallium in the monocrystalline germanium wafer, the ratio of silicon to gallium in the preparation of the monocrystalline germanium.
Inventors:
SHETTY RAJARAM (US)
WANG YUANLI (CN)
ZHOU YVONNE (US)
LIU WEIGUO (US)
CHU SUNG-NEE GEORGE (US)
WANG YUANLI (CN)
ZHOU YVONNE (US)
LIU WEIGUO (US)
CHU SUNG-NEE GEORGE (US)
Application Number:
PCT/CN2018/094956
Publication Date:
June 13, 2019
Filing Date:
July 09, 2018
Export Citation:
Assignee:
BEIJING TONGMEI XTAL TECH CO LTD (CN)
International Classes:
H01L31/0288
Foreign References:
| CN108091708A | 2018-05-29 | |||
| CN102877121A | 2013-01-16 | |||
| CN102312279A | 2012-01-11 | |||
| JP2010215455A | 2010-09-30 | |||
| US20170004969A1 | 2017-01-05 | |||
| CN103659349A | 2014-03-26 |
Other References:
See also references of EP 3721478A4
Attorney, Agent or Firm:
PEKSUNG INTELLECTUAL PROPERTY LTD. (CN)
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