MONOCRYSTALLINE SUBSTRATE PRODUCTION METHOD AND MONOCRYSTALLINE MEMBER WITH MODIFIED LAYER FORMED THEREIN

WIPO Patent Application WO/2012/108052

A1

The present invention addresses the problem of providing a monocrystalline substrate production method capable of easily producing a relatively large and thin monocrystalline substrate, and a monocrystalline member with a modified layer formed therein. The method comprises: a step for arranging in a non-contact state upon a monocrystalline member (10) a laser condensing means; a step for irradiating a surface (10t) of the monocrystalline member (10) with a laser beam (B), and condensing the laser beam (B) on the interior of the monocrystalline member (10); a step for moving the laser condensing means and the monocrystalline member (10) relative to each other, and forming a two-dimensional modified layer (12) in the interior of the monocrystalline member (10); and a step for forming a monocrystalline substrate (10s) by detaching, from the interface with the modified layer (12), a monocrystalline layer (10u) formed as a result of segmentation by the modified layer (12).

KUNISHI YOSUKE (JP)
SUZUKI HIDEKI (JP)
MATSUO RIKA (JP)
IKENO JUNICHI (JP)

PCT/JP2011/052941

August 16, 2012

February 10, 2011

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SHINETSU POLYMER CO (JP)
UNIV SAITAMA NAT UNIV CORP (JP)
KUNISHI YOSUKE (JP)
SUZUKI HIDEKI (JP)
MATSUO RIKA (JP)
IKENO JUNICHI (JP)

H01L21/02; B23K26/40; B28D5/00; H01L21/268; H01L21/301; H01L21/304

JP2005294325A	2005-10-20
JPH09331077A	1997-12-22
JP2011003624A	2011-01-06
JP2010153590A	2010-07-08

MIYOSHI, Hidekazu et al. (JP)
Hidekazu Miyoshi (JP)

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