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Title:
MONOCRYSTALLINE SUBSTRATE PRODUCTION METHOD AND MONOCRYSTALLINE MEMBER WITH MODIFIED LAYER FORMED THEREIN
Document Type and Number:
WIPO Patent Application WO/2012/108055
Kind Code:
A1
Abstract:
The present invention addresses the problem of providing a monocrystalline substrate production method capable of easily producing a relatively large and thin monocrystalline substrate, and a monocrystalline member with a modified layer formed therein. This method comprises: a step for arranging a laser condensing means upon a monocrystalline member in a non-contact state; a step for irradiating, with a laser beam, a surface (10t) of the monocrystalline member by means of the laser condensing means, and condensing the laser beam on the interior of the monocrystalline member; a step for moving the laser condensing means and monocrystalline member relative to each other, and forming a two-dimensional modified layer (12), created by a polycrystalline part parallel with the irradiating axis of the laser beam in the interior of the monocrystalline member; and a step for forming a monocrystalline substrate (10s) by detaching, from the interface with the modified layer (12), a monocrystalline layer (10u) formed as a result of segmentation by the modified layer (12).

Inventors:
KUNISHI YOSUKE (JP)
SUZUKI HIDEKI (JP)
MATSUO RIKA (JP)
IKENO JUNICHI (JP)
Application Number:
PCT/JP2011/052950
Publication Date:
August 16, 2012
Filing Date:
February 10, 2011
Export Citation:
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Assignee:
SHINETSU POLYMER CO (JP)
UNIV SAITAMA NAT UNIV CORP (JP)
KUNISHI YOSUKE (JP)
SUZUKI HIDEKI (JP)
MATSUO RIKA (JP)
IKENO JUNICHI (JP)
International Classes:
H01L21/02; B23K26/08; B23K26/40; B28D5/00; H01L21/268; H01L21/301; H01L21/304
Foreign References:
JP2011003624A2011-01-06
JP2007142000A2007-06-07
JPH09331077A1997-12-22
JP2009226457A2009-10-08
JP2005294325A2005-10-20
Attorney, Agent or Firm:
MIYOSHI, Hidekazu et al. (JP)
Hidekazu Miyoshi (JP)
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Claims: