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Patent Searching and Data


Title:
MONOLITHIC MICROWAVE INTEGRATED CIRCUIT AND HIGH FREQUENCY AMPLIFIER
Document Type and Number:
WIPO Patent Application WO/2019/186881
Kind Code:
A1
Abstract:
Provided is a monolithic microwave integrated circuit having mounted thereon a matching circuit that comprises: a high frequency connection terminal (4) for being connected from a transistor that amplifies high frequency; and a high frequency power transmission line (40) for outputting high frequency to the outside. The monolithic microwave integrated circuit comprising, separately from the high frequency connection terminal, a matching connection terminal (11) for being connected from the transistor, a matching transmission line (31) extending from the matching connection terminal (11), and a matching MIM (21). The matching transmission line (31) are arranged so as to be spaced apart from and in parallel with a front electrode (211) of the matching MIM (21), and the matching transmission line (31) is provided with a connection electrode (311) that connects the front electrode (211) of the matching MIM (21) with the matching transmission line (31) in a portion of a parallelly-arranged part.

Inventors:
HARUNA Takao (7-3 Marunouchi 2-chome, Chiyoda-k, Tokyo 10, 〒1008310, JP)
Application Number:
JP2018/013197
Publication Date:
October 03, 2019
Filing Date:
March 29, 2018
Export Citation:
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Assignee:
MITSUBISHI ELECTRIC CORPORATION (7-3 Marunouchi 2-chome, Chiyoda-ku Tokyo, 10, 〒1008310, JP)
International Classes:
H03F3/60; H01P5/08
Foreign References:
JP2000106510A2000-04-11
JPH0457502A1992-02-25
JPH07240645A1995-09-12
JPH11127045A1999-05-11
JP2009141411A2009-06-25
US9130511B22015-09-08
Attorney, Agent or Firm:
OIWA Masuo et al. (35-8, Minamimukonoso 3-chomeAmagasaki-sh, Hyogo 33, 〒6610033, JP)
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