MOS FIELD EFFECT TRANSISTOR-BASED FILTER CIRCUIT AND CHIP

Title:

MOS FIELD EFFECT TRANSISTOR-BASED FILTER CIRCUIT AND CHIP

Document Type and Number:

WIPO Patent Application WO/2018/227409

Kind Code:

A1

Abstract:

A metal-oxide semiconductor (MOS) field effect transistor-based filter circuit and a chip, the filter circuit comprising: a first MOS field effect transistor (M1) and an electrostatic discharge unit; during normal operation, a filter capacitor is formed between a gate (G) of the first MOS field effect transistor (M1) and a substrate; when an electro-static discharge (ESD) event occurs, the electrostatic discharge unit and the first MOS field effect transistor (M1) form a discharge path that transfers accumulated electrostatic charge to ground (VSS). On the basis of the first MOS field effect transistor (M1), the electrostatic discharge unit is additionally provided, and thus capacitive characteristics and characteristics of an ESD discharge path, which are simultaneously required between a power supply (VDD) and ground (VSS), are combined into the same circuit, allowing the circuit to exhibit a capacitive characteristic during normal operation; an ESD discharge path is provided when an ESD event occurs between the power supply (VDD) and ground (VSS), thus having the effect of ESD protection, thereby improving the ESD capabilities of the chip.

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Inventors:

CHEN JIANXING (CN)

Application Number:

PCT/CN2017/088201

Publication Date:

December 20, 2018

Filing Date:

June 14, 2017

Export Citation:

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Assignee:

SHENZHEN GOODIX TECH CO LTD (CN)

International Classes:

H03H11/38; H01L27/02

Foreign References:

CN101099279A	2008-01-02
US7863687B2	2011-01-04
US6919602B2	2005-07-19
US20070030610A1	2007-02-08
CN1702860A	2005-11-30
CN1979842A	2007-06-13

Other References: