Title:
MOSFET DEVICE AND MANUFACTURING METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2024/001327
Kind Code:
A1
Abstract:
A MOSFET device and a manufacturing method therefor. The manufacturing method comprises: first, implanting first ions by using a patterned mask layer (200), so as to form a well region (101), which is not prone to diffusion; then, implanting second ions in a self-aligned manner with a source region (102) by using the patterned mask layer (200) and a side wall (201) on a side of the patterned mask layer (200); and then by using the characteristic of the second ions being more prone to diffusion with respect to the first ions, forming a semi-superjunction (103), which is located at the bottom of the well region (101) and is connected to the bottom of the well region (101). The semi-superjunction (103) can play a role in effectively expanding the junction depth of the well region (101), such that the voltage resistance of the device can be improved, thereby achieving high turn-on performance of the device; moreover, a peak value of the intensity of an electric field below a gate oxide layer (301) can be shifted to below the well region (101), such that the intensity of the electric field below the gate oxide layer (301) is effectively reduced and more uniform, thereby improving the reliability of the device.
Inventors:
LI XIANG (CN)
XIE ZHIPING (CN)
CONG MAOJIE (CN)
LIANG XINYING (CN)
LUO DING (CN)
XIE ZHIPING (CN)
CONG MAOJIE (CN)
LIANG XINYING (CN)
LUO DING (CN)
Application Number:
PCT/CN2023/082994
Publication Date:
January 04, 2024
Filing Date:
March 22, 2023
Export Citation:
Assignee:
YUEZHOU SEMICONDUCTOR MFG ELECTRONICS SHAOXING CORP (CN)
International Classes:
H01L29/06; H01L21/336; H01L29/10; H01L29/78
Foreign References:
| CN115763522A | 2023-03-07 | |||
| CN105161539A | 2015-12-16 | |||
| CN105576025A | 2016-05-11 | |||
| US6238980B1 | 2001-05-29 | |||
| CN103325681A | 2013-09-25 |
Attorney, Agent or Firm:
SHANGHAI SAVVY INTELLECTUAL PROPERTY AGENCY (CN)
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