Title:
MOSFET, METHOD FOR MANUFACTURING MOSFET, AND POWER CONVERSION CIRCUIT
Document Type and Number:
WIPO Patent Application WO/2019/130513
Kind Code:
A1
Abstract:
Provided is a MOSFET 100 that is equipped with: a semiconductor base body 110 wherein a super junction structure is configured with an n-type column region 113 and a p-type column region 115; and a gate electrode 122 formed via a gate insulating film 120. In the semiconductor base body 110, when a region that provides main operations as a MOSFET is specified as an active region A1, a region that holds a withstand voltage is specified as an outer peripheral region A3, and a region between the active region A1 and the outer peripheral region A3 is specified as an active connection region A2, crystal defects are generated merely in the active region A1 and the active connection region A2, among the active region A1, the active connection region A2, and the outer peripheral region A3 of the semiconductor base body 110. A manufacturing method for manufacturing the MOSFET 100, and a power conversion circuit equipped with the MOSFET 100 are also provided. The MOSFET 100 relating to the present invention is a MOSFET, which is capable of reducing a recovery loss, and which generates less oscillation compared with conventional MOSFETs.
Inventors:
ARAI DAISUKE (JP)
KITADA MIZUE (JP)
ASADA TAKESHI (JP)
SUZUKI NORIAKI (JP)
MURAKAMI KOICHI (JP)
KITADA MIZUE (JP)
ASADA TAKESHI (JP)
SUZUKI NORIAKI (JP)
MURAKAMI KOICHI (JP)
Application Number:
PCT/JP2017/047082
Publication Date:
July 04, 2019
Filing Date:
December 27, 2017
Export Citation:
Assignee:
SHINDENGEN ELECTRIC MFG (JP)
International Classes:
H01L29/78; H01L21/336; H01L29/06
Domestic Patent References:
| WO2012063342A1 | 2012-05-18 |
Foreign References:
| JP2017098449A | 2017-06-01 | |||
| JP2017059712A | 2017-03-23 | |||
| JP2015018913A | 2015-01-29 | |||
| JP2000269234A | 2000-09-29 |
Attorney, Agent or Firm:
MATSUO, Nobutaka (JP)
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