Title:
MOSFET AND POWER CONVERSION CIRCUIT
Document Type and Number:
WIPO Patent Application WO/2018/087896
Kind Code:
A1
Abstract:
This MOSFET 100 is characterized by being provided with: a semiconductor substrate 110 provided with a super junction structure 117; and a gate electrode 126 formed on a first main surface side of the semiconductor substrate 110 with a gate insulating film 124 therebetween. The MOSFET 100 is further characterized in that, when the depths x of positions at prescribed depths of the super junction structure 117 are plotted on the horizontal axis, and the average positive charge densities ρ(x) in the positions at the prescribed depths of the super junction structure 117 are plotted on the vertical axis, the average positive charge densities ρ(x) in the positions at the prescribed depths of the super junction structure 117 when the MOSFET is turned off and the super junction structure 117 is depleted, are represented by an upwardly convex curve which rises upwards and to the right. According to this MOSFET 100, variation in the switching characteristics when turned off can be reduced in comparison to the prior art, even if there is variation in the charge balance around the gate.
Inventors:
ARAI DAISUKE (JP)
KITADA MIZUE (JP)
KITADA MIZUE (JP)
Application Number:
PCT/JP2016/083604
Publication Date:
May 17, 2018
Filing Date:
November 11, 2016
Export Citation:
Assignee:
SHINDENGEN ELECTRIC MFG (JP)
International Classes:
H01L29/78; H01L27/04; H01L29/12; H02M1/00
Foreign References:
| JP2013093560A | 2013-05-16 | |||
| JP2010171221A | 2010-08-05 | |||
| JP2012234848A | 2012-11-29 | |||
| JP2012120362A | 2012-06-21 | |||
| JP2015080321A | 2015-04-23 |
Attorney, Agent or Firm:
MATSUO, Nobutaka (JP)
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