Title:
MRAM DRY ETCHING RESIDUE REMOVAL COMPOSITION, MAGNETORESISTIVE RANDOM ACCESS MEMORY PRODUCTION METHOD, AND COBALT REMOVAL COMPOSITION
Document Type and Number:
WIPO Patent Application WO/2016/068182
Kind Code:
A1
Abstract:
The purpose of the present invention is to provide an MRAM dry etching residue removal composition that, in an MRAM production process, can remove dry etching residue while suppressing damage to a substrate that contains a specific metal, to provide a magnetoresistive random access memory production method that uses the MRAM dry etching residue removal composition, and to provide a cobalt removal composition that has excellent cobalt removal characteristics. This MRAM dry etching residue removal composition is characterized by containing water and a strong oxidizing agent. This cobalt removal composition is characterized by containing water and orthoperiodic acid.
Inventors:
PARK KEE YOUNG (JP)
MIZUTANI ATSUSHI (JP)
MIZUTANI ATSUSHI (JP)
Application Number:
PCT/JP2015/080366
Publication Date:
May 06, 2016
Filing Date:
October 28, 2015
Export Citation:
Assignee:
FUJIFILM CORP (JP)
International Classes:
H01L21/304; C11D3/04; C11D3/26; C11D3/30; C11D17/08; H01L21/027; H01L21/8246; H01L27/105; H01L43/12
Foreign References:
| JP2009231354A | 2009-10-08 | |||
| JP2012119564A | 2012-06-21 |
Attorney, Agent or Firm:
NOGUCHI YASUHIRO (JP)
Takahiro Noguchi (JP)
Takahiro Noguchi (JP)
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