MTJ STRUCTURE HAVING VERTICAL MAGNETIC ANISOTROPY AND MAGNETIC ELEMENT INCLUDING SAME

WIPO Patent Application WO/2016/117853

A1

An MTJ structure having vertical magnetic anisotropy is provided. The MTJ structure having vertical magnetic anisotropy can comprise: a substrate; an artificial antiferromagnetic layer located on the substrate; a buffer layer located on the artificial antiferromagnetic layer, and including W or an alloy containing W; a first ferromagnetic layer located on the buffer layer, and having vertical magnetic anisotropy; a tunneling barrier layer located on the first ferromagnetic layer; and a second ferromagnetic layer located on the tunneling barrier layer, and having vertical magnetic anisotropy. Accordingly, in the application of bonding the artificial antiferromagnetic layer with a CoFeB/MgO/CoFeB structure, the MTJ structure having improved thermal stability at high temperature can be provided by using the buffer layer therebetween.

HONG JINPYO (KR)
LEE JABIN (KR)

PCT/KR2016/000107

July 28, 2016

January 06, 2016

Click for automatic bibliography generation  

IUCF HYU (KR)

H01L43/10; G11C11/15; H01L43/02

KR101476932B1	2014-12-26
KR20120006056A	2012-01-17
US20130130406A1	2013-05-23

JEON, M. S. ET AL.: "Effective of Tungsten Seed Layer on Perpendicular Magnetic Anisotropy for Co2FeAl Full-Heusler Half-Metal Based Perpendicular Magnetic Tunnel Junctions", 226TH MEETING ON THE ELECTROCHEMICAL SOCIETY, 8 October 2014 (2014-10-08)
CHANG, YAO - JEN ET AL.: "Perpendicular Magnetic Tunnel Junctions with Synthetic Antiferromagnetic pinned Layers based on [Co/Pd] Multilayers", JOURNAL OF APPLIED PHYSICS, vol. 113, 12 April 2013 (2013-04-12), pages 17B909

E-SANG PATENT & TRADEMARK LAW FIRM (KR)
특허법인 이상 (KR)

View/Download PDF      PDF Help

Previous Patent: METHOD FOR PREPARING TICAGRELOR AND NOVEL INTERMEDIATES THEREFOR

Next Patent: TEXT EDITING APPARATUS AND TEXT EDITING METHOD BASED ON SPEECH SIGNAL