Title:
MTJ STRUCTURE HAVING VERTICAL MAGNETIC ANISOTROPY AND MAGNETIC ELEMENT INCLUDING SAME
Document Type and Number:
WIPO Patent Application WO/2016/117853
Kind Code:
A1
Abstract:
An MTJ structure having vertical magnetic anisotropy is provided. The MTJ structure having vertical magnetic anisotropy can comprise: a substrate; an artificial antiferromagnetic layer located on the substrate; a buffer layer located on the artificial antiferromagnetic layer, and including W or an alloy containing W; a first ferromagnetic layer located on the buffer layer, and having vertical magnetic anisotropy; a tunneling barrier layer located on the first ferromagnetic layer; and a second ferromagnetic layer located on the tunneling barrier layer, and having vertical magnetic anisotropy. Accordingly, in the application of bonding the artificial antiferromagnetic layer with a CoFeB/MgO/CoFeB structure, the MTJ structure having improved thermal stability at high temperature can be provided by using the buffer layer therebetween.
Inventors:
HONG JINPYO (KR)
LEE JABIN (KR)
LEE JABIN (KR)
Application Number:
PCT/KR2016/000107
Publication Date:
July 28, 2016
Filing Date:
January 06, 2016
Export Citation:
Assignee:
IUCF HYU (KR)
International Classes:
H01L43/10; G11C11/15; H01L43/02
Foreign References:
KR101476932B1 | 2014-12-26 | |||
KR20120006056A | 2012-01-17 | |||
US20130130406A1 | 2013-05-23 |
Other References:
JEON, M. S. ET AL.: "Effective of Tungsten Seed Layer on Perpendicular Magnetic Anisotropy for Co2FeAl Full-Heusler Half-Metal Based Perpendicular Magnetic Tunnel Junctions", 226TH MEETING ON THE ELECTROCHEMICAL SOCIETY, 8 October 2014 (2014-10-08)
CHANG, YAO - JEN ET AL.: "Perpendicular Magnetic Tunnel Junctions with Synthetic Antiferromagnetic pinned Layers based on [Co/Pd] Multilayers", JOURNAL OF APPLIED PHYSICS, vol. 113, 12 April 2013 (2013-04-12), pages 17B909
CHANG, YAO - JEN ET AL.: "Perpendicular Magnetic Tunnel Junctions with Synthetic Antiferromagnetic pinned Layers based on [Co/Pd] Multilayers", JOURNAL OF APPLIED PHYSICS, vol. 113, 12 April 2013 (2013-04-12), pages 17B909
Attorney, Agent or Firm:
E-SANG PATENT & TRADEMARK LAW FIRM (KR)
특허법인 이상 (KR)
특허법인 이상 (KR)
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