Title:
MULTI-ACTIVE-REGION SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2023/130711
Kind Code:
A1
Abstract:
A multi-active-region semiconductor structure and a manufacturing method therefor. The multi-active-region semiconductor structure comprises: a (2k-1)th common confinement layer which is located between a kth active layer and a kth tunnel junction and is in contact with the kth tunnel junction, and a (2k)th common confinement layer which is located between a (k+1)th active layer and the kth tunnel junction and is in contact with the kth tunnel junction; the forbidden band width of a kth quantum well layer is smaller than the forbidden band width of a kth first semiconductor layer and the forbidden band width of a kth second semiconductor layer; the total thickness of the (2k-1)th common confinement layer and the (2k)th common confinement layer is greater than the coupling thickness of a critical optical field and is less than or equal to two times of the coupling thickness of the critical optical field; and the thickness of the kth quantum well layer is less than or equal to 1/10 of the (2k-1)th common confinement layer, and the thickness of the kth quantum well layer is less than or equal to 1/10 of the (2k)th common confinement layer. The light-emitting efficiency of the multi-active-region semiconductor structure is effectively improved, and optical field crosstalk is reduced.
Inventors:
WANG JUN (CN)
GOU YUDAN (CN)
ZHOU LI (CN)
CHENG YANG (CN)
TAN SHAOYANG (CN)
ZHANG LICHEN (CN)
LI BO (CN)
HU YIWEN (CN)
MIN DAYONG (CN)
GOU YUDAN (CN)
ZHOU LI (CN)
CHENG YANG (CN)
TAN SHAOYANG (CN)
ZHANG LICHEN (CN)
LI BO (CN)
HU YIWEN (CN)
MIN DAYONG (CN)
Application Number:
PCT/CN2022/106858
Publication Date:
July 13, 2023
Filing Date:
July 20, 2022
Export Citation:
Assignee:
SUZHOU EVERBRIGHT PHOTONICS CO LTD (CN)
EVERBRIGHT INST OF SEMICONDUCTOR PHOTONICS CO LTD (CN)
EVERBRIGHT INST OF SEMICONDUCTOR PHOTONICS CO LTD (CN)
International Classes:
H01S5/343; H01S5/34
Foreign References:
| CN114006268A | 2022-02-01 | |||
| CN110880676A | 2020-03-13 | |||
| CN112531051A | 2021-03-19 | |||
| CN1588717A | 2005-03-02 | |||
| CN103078252A | 2013-05-01 | |||
| US20070145388A1 | 2007-06-28 |
Attorney, Agent or Firm:
SUNSHINE INTELLECTUAL PROPERTY INTERNATIONAL CO., LTD. (CN)
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