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Patent Searching and Data


Title:
MULTI-CHANNEL TOPOLOGICAL INSULATOR STRUCTURE, PREPARATION METHOD, AND ELECTRICAL DEVICE
Document Type and Number:
WIPO Patent Application WO/2019/148762
Kind Code:
A1
Abstract:
The present application provides a multi-channel topological insulator structure, comprising: an insulating substrate (10), a plurality of topological insulator quantum well thin films (20), and a plurality of insulating spacer layers (40). The plurality of topological insulator quantum well thin films (20) and the plurality of insulating spacer layers (40) are alternately stacked on a surface of the insulating substrate (10); two adjacent topological insulator quantum well thin films (20) are separated by one insulating spacer layer (40). The present application further provides a preparation method for the multi-channel topological insulator structure, and an electrical device.

Inventors:
HE KE (CN)
JIANG GAOYUAN (CN)
XUE QIKUN (CN)
Application Number:
PCT/CN2018/093185
Publication Date:
August 08, 2019
Filing Date:
June 27, 2018
Export Citation:
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Assignee:
UNIV TSINGHUA (CN)
International Classes:
H01L43/10
Foreign References:
CN103000803A2013-03-27
CN107369757A2017-11-21
CN106521619A2017-03-22
Attorney, Agent or Firm:
ACIP LAW OFFICES (CN)
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