Title:
MULTI-COMPONENT RELAXOR FERROELECTRIC THIN FILM MATERIAL HAVING SUPERLATTICE STRUCTURE AND ULTRA HIGH ENERGY STORAGE EFFICIENCY, AND PREPARATION METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2023/273213
Kind Code:
A1
Abstract:
Disclosed in the present application are a multi-component relaxor ferroelectric thin film material having a superlattice structure and ultra high energy storage efficiency, and a preparation method therefor. The multi-component relaxor ferroelectric thin film material comprises a substrate layer, a bottom electrode layer formed on the substrate layer, and an actual functional layer formed on the bottom electrode layer, the actual functional layer being a multi-layer structure thin film having a relaxor ferroelectric property and grown using the bottom electrode layer as a basis. The preparation method therefor comprises: selecting a rigid STO layer having a crystal orientation of [100] to serve as the substrate layer; forming an SRO layer on the STO substrate to serve as the bottom electrode layer; forming a BTO-STO-BFO multi-layer structure on the SRO layer to serve as an actual functional layer, and obtaining the multi-component relaxor ferroelectric thin film material. The multi-component relaxor ferroelectric thin film material of the present application is a superlattice structure, has advantageous properties of a high saturation polarization intensity, a low remanent polarization intensity, and a high breakdown field, and also has an excellent energy storage density and an excellent energy storage efficiency.
Inventors:
CHEN QIANXIN (CN)
ZHONG GAOKUO (CN)
LI JIANGYU (CN)
ZHONG XIANGLI (CN)
HUANG MINGQIANG (CN)
WANG JINBIN (CN)
REN CHUANLAI (CN)
ZHONG GAOKUO (CN)
LI JIANGYU (CN)
ZHONG XIANGLI (CN)
HUANG MINGQIANG (CN)
WANG JINBIN (CN)
REN CHUANLAI (CN)
Application Number:
PCT/CN2021/139349
Publication Date:
January 05, 2023
Filing Date:
December 17, 2021
Export Citation:
Assignee:
SHENZHEN INST OF ADV TECH CAS (CN)
International Classes:
H01G4/12
Foreign References:
| CN113690051A | 2021-11-23 | |||
| CN203521478U | 2014-04-02 | |||
| JP2008285350A | 2008-11-27 | |||
| US20090098664A1 | 2009-04-16 | |||
| US20200098973A1 | 2020-03-26 |
Other References:
ZHANG, WEI: "Highly-oriented Growth of Perovskite Ferroelectric Thin Film Heterostructures and Investigation of Their Properties", CHINA DOCTORAL DISSERTATIONS FULL-TEXT DATABASE (ENGINEERING SCIENCE AND TECHNOLOGY I), 21 May 2014 (2014-05-21), XP093019076, [retrieved on 20230130]
Attorney, Agent or Firm:
BEIJING ZHONG XUN TONG DA INTELLECTUAL PROPERTY AGENCY CO., LTD. (CN)
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