Title:
MULTI-STATE ONE-TIME PROGRAMMABLE MEMORY CIRCUIT
Document Type and Number:
WIPO Patent Application WO/2024/041607
Kind Code:
A1
Abstract:
The present disclosure provides a multi-state one-time programmable memory circuit, comprising a memory cell and a programming voltage driving circuit. The memory cell comprises a metal oxide semiconductor field effect storage transistor, a first metal oxide semiconductor field effect access transistor, and a second metal oxide semiconductor field effect access transistor, and is used for storing two-bit data. When the memory cell is in a write state, the programming voltage driving circuit outputs a write control potential to a gate of the metal oxide semiconductor field effect storage transistor, and when the memory cell is in a read state, the programming voltage driving circuit outputs a read control potential to the gate of the metal oxide semiconductor field effect storage transistor.
Inventors:
CHANG CHENFENG (CN)
LO YUCHEN (CN)
LU TSUNGHAN (CN)
CHANG SHUCHIEH (CN)
LIANG CHUNHAO (CN)
WU DONGYU (CN)
WU MENGLIN (CN)
LO YUCHEN (CN)
LU TSUNGHAN (CN)
CHANG SHUCHIEH (CN)
LIANG CHUNHAO (CN)
WU DONGYU (CN)
WU MENGLIN (CN)
Application Number:
PCT/CN2023/114693
Publication Date:
February 29, 2024
Filing Date:
August 24, 2023
Export Citation:
Assignee:
JMEM TECH CO LTD (CN)
International Classes:
G11C17/18
Foreign References:
| US20060054952A1 | 2006-03-16 | |||
| US9613714B1 | 2017-04-04 | |||
| CN111933193A | 2020-11-13 | |||
| CN113130497A | 2021-07-16 | |||
| CN114695363A | 2022-07-01 | |||
| US20130051113A1 | 2013-02-28 | |||
| US20160148705A1 | 2016-05-26 |
Attorney, Agent or Firm:
SHENZHEN SCIENBIZIP INTELLECTUAL PROPERTY AGENCY CO., LTD. (CN)
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