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Patent Searching and Data


Title:
MULTILAYER CRUCIBLE FOR CASTING SILICON INGOT AND METHOD FOR MANUFACTURING THE CRUCIBLE
Document Type and Number:
WIPO Patent Application WO/2011/122585
Kind Code:
A1
Abstract:
Disclosed is a multilayer crucible for casting a silicon ingot, which can suppress mixing of oxygen in the silicon ingot. Also disclosed is a method for manufacturing the multilayer crucible. The multilayer crucible (1) for casting the silicon ingot is provided so as to manufacture the silicon ingot by melting and casting a silicon raw material, and the crucible is provided with a silica layer (3), which is provided on the inner side of a casting mold (2), and a barium coating layer (4), which is provided on the surface of the silica layer (3).

Inventors:
WAKITA SABURO (JP)
TSUZUKIHASHI KOJI (JP)
IKEDA HIROSHI (JP)
KANAI MASAHIRO (JP)
Application Number:
PCT/JP2011/057708
Publication Date:
October 06, 2011
Filing Date:
March 28, 2011
Export Citation:
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Assignee:
MITSUBISHI MATERIALS CORP (JP)
MITSUBISHI MAT ELECT CHEM CO (JP)
WAKITA SABURO (JP)
TSUZUKIHASHI KOJI (JP)
IKEDA HIROSHI (JP)
KANAI MASAHIRO (JP)
International Classes:
C01B33/02; C30B29/06
Foreign References:
JPH11244988A1999-09-14
JP2010058987A2010-03-18
JP2006273664A2006-10-12
JP2006273666A2006-10-12
JPH09263489A1997-10-07
Attorney, Agent or Firm:
SHIGA Masatake et al. (JP)
Masatake Shiga (JP)
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Claims: