Title:
MULTILAYER MAGNETIC THIN FILM STACK AND NON-VOLATILE MEMORY DEVICE INCLUDING SAME
Document Type and Number:
WIPO Patent Application WO/2016/137171
Kind Code:
A1
Abstract:
The present invention relates to a multilayer magnetic thin film stack and a non-volatile memory device using a magnetic tunneling junction (MTJ). A multilayer magnetic thin film stack according to an embodiment of the present invention comprises a tunneling barrier layer, a magnetic fixed layer on a first surface of the tunneling barrier layer, and a magnetic free layer on a second surface opposite to the first surface of the tunneling barrier layer. In an embodiment, at least one of the magnetic fixed layer and the magnetic free layer has a body-centered cubic structure due to the tunnel barrier layer, and comprises: a first CoFe-based magnetic layer containing cobalt (Co) and iron (Fe); a second magnetic layer interlayer-magnetic-exchange-coupled with the CoFe-based magnetic layer; and a first complex spacer layer placed between the first CoFe-based magnetic layer and the second magnetic layer and including a laminated structure of a tantalum (Ta) layer adjacent to the CoFe-based magnetic layer and a ruthenium (Ru) layer adjacent to the second magnetic layer.
Inventors:
LIM SANG HO (KR)
YUN SEOK JIN (KR)
LEE SEONG RAE (KR)
YUN SEOK JIN (KR)
LEE SEONG RAE (KR)
Application Number:
PCT/KR2016/001688
Publication Date:
September 01, 2016
Filing Date:
February 22, 2016
Export Citation:
Assignee:
UNIV KOREA RES & BUS FOUND (KR)
International Classes:
H01L43/02; H01L43/10; H01L43/12
Foreign References:
| US20110318848A1 | 2011-12-29 | |||
| US20120205759A1 | 2012-08-16 | |||
| US20140203383A1 | 2014-07-24 | |||
| US20140175428A1 | 2014-06-26 | |||
| US20140287537A1 | 2014-09-25 |
Attorney, Agent or Firm:
NURY PATENT LAW FIRM (KR)
특허법인 누리 (KR)
특허법인 누리 (KR)
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