MULTILAYER REFLECTIVE FILM-ATTACHED SUBSTRATE, REFLECTIVE MASK BLANK, REFLECTIVE MASK, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

WIPO Patent Application WO/2023/037980

A1

Provided is a multilayer reflective film-attached substrate having a multilayer reflective film which has a shallow effective reflection surface and in which the phenomenon of material atom diffusion between a low-refractive-index layer and a high-refractive-index layer can be suppressed.　The multilayer reflective film-attached substrate comprises a substrate and a multilayer reflective film disposed on the substrate, wherein the multilayer reflective film includes a multilayer film in which low-refractive-index layers containing at least one selected from ruthenium (Ru) and rhodium (Rh) and high-refractive-index layers containing silicon (Si) are alternately laminated, and the low-refractive-index layer further contains an additive element having a work function in the range of more than 3.7 eV and less than 4.7 eV.

JP5796307	Reflective mask blank and its manufacturing method
JP6470188	A magnified imaging optical unit and an EUV mask inspection system having such an imaging optical unit
JP2022169487	METHOD FOR MEASURING EFFECT OF WAVELENGTH-DEPENDENT MEASURING LIGHT REFLECTIVITY AND EFFECT OF POLARIZATION OF MEASURING LIGHT ON MEASURING LIGHT IMPINGEMENT ON LITHOGRAPHY MASK

NAKAGAWA MASANORI (JP)
UMEZAWA TEIICHIRO (JP)
IKEBE YOHEI (JP)

PCT/JP2022/033127

March 16, 2023

September 02, 2022

Click for automatic bibliography generation  

HOYA CORP (JP)

G03F1/24; G21K1/06

JP2021039271A	2021-03-11
JP2014056960A	2014-03-27
JP2006173446A	2006-06-29
JP2006093454A	2006-04-06

TSUKUNI & ASSOCIATES et al. (JP)

View/Download PDF      PDF Help

Previous Patent: COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM, MULTILAYER BODY USING SAID COMPOS...

Next Patent: INSULATED GATE SEMICONDUCTOR DEVICE