Title:
MULTILAYER REFLECTIVE FILM-ATTACHED SUBSTRATE, REFLECTIVE MASK BLANK, REFLECTIVE MASK, AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2023/074770
Kind Code:
A1
Abstract:
[Problem] To obtain a multilayer reflective film-attached substrate having a structure in which a protective film made of a material containing metal is provided, the multilayer reflective film-attached substrate being configured such that a decrease in the reflective properties, with respect to EUV light, of the multilayer reflective film is suppressed. [Solution] This multilayer reflective film-attached substrate includes a substrate, a multilayer reflective film disposed on the substrate, and a protective film disposed on the multilayer reflective film, the multilayer reflective film-attached substrate being characterized in that: the protective film has a silicon-containing layer, a first layer, a second layer, and a third layer in this order on the multilayer reflective film; the protective film contains metal and nitrogen; and when the nitrogen content of the first layer is defined as N1, the nitrogen content of the second layer as N2, and the nitrogen content of the third layer as N3, N2 is greater than N1 and N3.
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Inventors:
NAKAGAWA MASANORI (JP)
SUZUKI KOTA (JP)
KISHIDA HIBIKI (JP)
SUZUKI KOTA (JP)
KISHIDA HIBIKI (JP)
Application Number:
PCT/JP2022/040039
Publication Date:
May 04, 2023
Filing Date:
October 26, 2022
Export Citation:
Assignee:
HOYA CORP (JP)
International Classes:
G03F1/24; G03F7/20
Domestic Patent References:
| WO2020256064A1 | 2020-12-24 | |||
| WO2012014904A1 | 2012-02-02 |
Foreign References:
| JP2014127630A | 2014-07-07 |
Attorney, Agent or Firm:
OKABE Noriaki et al. (JP)
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