Title:
MULTILAYER REFLECTIVE FILM-EQUIPPED SUBSTRATE, REFLECTIVE MASK BLANK, REFLECTIVE MASK, AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2022/138434
Kind Code:
A1
Abstract:
Provided are: a multilayer reflective film-equipped substrate that is provided with a protective film having high resistance to a fluorine-based etching gas for use in a step for repairing a absorbent pattern without decreasing the reflectivity of a multilayer reflective film; a reflective mask blank; and a reflective mask. A multilayer reflective film-equipped substrate (100) has: a substrate (10); a multilayer reflective film (12) disposed on the substrate (10); and a protective film (14) disposed on the multilayer reflective film (12). The protective film (14) contains a first metal and a second metal. The standard formation free energy of a fluoride of the first metal is higher than the standard formation free energy of RuF5. The second metal exhibits an extinction coefficient of not more than 0.03 at a wavelength of 13.5 nm.
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Inventors:
FUKASAWA IKUYA (JP)
SUZUKI KOTA (JP)
NAKAGAWA MASANORI (JP)
SUZUKI KOTA (JP)
NAKAGAWA MASANORI (JP)
Application Number:
PCT/JP2021/046485
Publication Date:
June 30, 2022
Filing Date:
December 16, 2021
Export Citation:
Assignee:
HOYA CORP (JP)
International Classes:
G03F1/24; G03F1/48; G03F7/20
Domestic Patent References:
| WO2015012151A1 | 2015-01-29 |
Foreign References:
| JP2006173497A | 2006-06-29 | |||
| JP2011029334A | 2011-02-10 | |||
| JP2010518594A | 2010-05-27 | |||
| JP2003318104A | 2003-11-07 | |||
| US20150010854A1 | 2015-01-08 |
Attorney, Agent or Firm:
TSUKUNI & ASSOCIATES et al. (JP)
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