Title:
MULTILAYER THERMOELECTRIC CONVERSION ELEMENT
Document Type and Number:
WIPO Patent Application WO/2017/163507
Kind Code:
A1
Abstract:
This multilayer thermoelectric conversion element is provided with a p-type layer containing a p-type semiconductor material, an n-type layer containing an n-type semiconductor material, and an insulating layer containing an insulating material. This multilayer thermoelectric conversion element is characterized in that: a pn junction pair is formed by joining the p-type layer and the n-type layer with each other; the p-type semiconductor material and the n-type semiconductor material are directly joined with each other in a region of the junction surface between the p-type layer and the n-type layer; the p-type semiconductor material and the n-type semiconductor material are joined with each other with the insulating layer being interposed therebetween in the other regions of the junction surface; the p-type semiconductor material is an alloy containing Ni; the n-type semiconductor material is a composite oxide containing Sr, Ti, Zr, a rare earth element and O, and the molar ratio represented by Zr/(Ti + Zr) satisfies 0.0001 ≤ Zr/(Ti + Zr) ≤ 0.1; and the insulating material is a partially stabilized zirconia that contains ZrO2 and at least one metal oxide M selected from the group consisting of Y2O3 and CaO, and the molar ratio represented by M/(ZrO2 + M) satisfies 0.026 ≤ M/(ZrO2 + M) ≤ 0.040.
Inventors:
HAYASHI SACHIKO (JP)
Application Number:
PCT/JP2016/087638
Publication Date:
September 28, 2017
Filing Date:
December 16, 2016
Export Citation:
Assignee:
MURATA MANUFACTURING CO (JP)
International Classes:
H01L35/32; H01L35/22
Domestic Patent References:
| WO2012011334A1 | 2012-01-26 |
Foreign References:
| JP2006179807A | 2006-07-06 | |||
| JP2010254493A | 2010-11-11 |
Attorney, Agent or Firm:
YASUTOMI & ASSOCIATES (JP)
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