Background of the Invention Contemporary pressure sensor applications require sensing pressures in a variety of pressure ranges. In automotive applications it is common to sense pressures over a very wide range. For example, in emission control applications, evaporative emissions fuel (EVAP) systems pressures are on the order of 7.5 kPa, and in Exhaust Gas Recirculation (EGR) systems, pressures are on the order of 50 kPa. In fuel control applications intake manifold pressure (MAP) sensors need to sense pressures on the order of 100 kPa, turbocharger sensors need to sense pressures on the order of 200 kPa, and fuel rail sensors need to sense pressures on the order of 500kPa. A single sensor cannot effectively serve all of these applications because of the wide pressure range.

One type of pressure sensor positions a Piezo-Resistive Transducer (PRT) or silicon strain guage onto a reletively thin diaphragm. When the diaphragm is subjected to varying pressures the diaphragm deflects which causes the strain gauge to output a signal indicative of the varying diaphragm deflections. The cross sectional thickness of the diaphragm and the overall area of the diaphragm define its flexibility, or its tendency to deflect based on a change in pressure. So when subjected to a certain pressure a relatively thin diaphragm will exhibit a relatively large deflection, and a relatively large surface area diaphragm will also exhibit a relatively large deflection. The thinner the d the harder it is to fabricate accurately with high production yields, and the larger the surface area of the d the more costly and bulky the sensor becomes. As a practical matter to accurately sense relatively low pressures in the EVAP application the diaphragm must be relatively thin-typically on the order of 10 micrometers, and relatively large- typically on the order of-mm2. Consistently fabricating ds with thickness on the order of 10 micrometers is difficult and time consuming. For a relatively thin diaphragm small diaphragm thickness deviations from a nominal are greatly magnified since a fixed tolerance becomes larger portion of the diaphragm thickness. This in turn creates large variations in the sensing element span and pressure nonlinearity, variations in two parameters which play a major part in determining any sensing element quality.

At present, to cover all the required pressure ranges, custom silicon PRT pressure sensing elements are built for each specific pressure range. These custom

sensing elements are implemented with different diaphragm areas and diaphragm thickness, and are of the different sizes. This makes manufacturing complex.

Moreover relatively thin and relatively large surface area ds will cost considerably more to manufacture than thicker and smaller ds because of material cost and manufacturing process complexity.

In current PRT sensors, to meet the sensitivity requirements of EVAP applications a relatively large surface area diaphragm is required. In a monolithic sensor design, which integrates sensing element and electronics on the same die, this relatively large surface area diaphragm leaves less area around the die for a signal conditioning circuit. It creates very inefficient or almost impossible Integrated Circuit (IC) layout of such monolithic die. Moreover a new and different layout has to be made for each substantially different pressure range which is expensive and time consuming. In addition, it is difficult to use timed etch technique to etch the diaphragm because any single type of sensing element can only tolerate a small diaphragm thickness deviation from the nominal. The problem is greatly magnified for sensors where the diaphragm has to have a relatively large surface area and also relatively thin, since a fixed tolerance becomes larger portion of the diaphragm thickness which in turn creates large variations in the sensing element span and pressure non-linearity.

What is needed is and improved pressure sensor that can accurately operate over a wide pressure range that is easier to manufacture.

Brief Description of the Drawings FIG. 1 is a schematic diagram of a prior art pressure sensor; FIG. 2 is a schematic diagram showing a multiple element pressure sensor in accordance with a preferred embodiment of the invention; and FIG. 3 is a schematic diagram illustrating a preferred circuit for combining the multiple sensor elements introduced in FIG. 2, in accordance with the preferred embodiment of the invention.

Detailed Description of the Preferred Embodiment Assuming that each sensor is located the same distance from the edge of the diaphragm, which in this case is our intention, pressure sensitivity of the sensor can be expressed as follows: S=k*(b/h) ^2 where b is side of square diaphragm h is diaphragm thickness k is constant Summing 4 sensors will yield: S=4*k* (b/h) ^2 so if the diaphragm area is unchanged but thickness is'2h'we will get the same sensitivity as for one sensor with thickness'h'.

It is easy to control etching to get h=20 um. Etching of 10 um thick diaphragm is difficult and for sure will give low yields.

A A means for creating a lower pressure range sensor using multiple higher pressure range sensors is disclosed. Multiple, for example, four higher pressure range sensors will be fabricated on one diaphragm. All or some of them will be connected to the on-die IC by the on-die electrical switch for lower pressure application. This new solution can use low cost timed etch technique with much less problems than the current solution since a diaphragm thickness is large. The cost will be lower since the diaphragm area will be smaller.

By using one standard mask set and one wafer process four sensors of localized Wheatstone bridge configuration will be integrated with the programmable signal conditioning IC on the same silicon die as shown in Figure 4. In response to the lower than designed for pressure each element on the diaphragm will respond with low sensitivity but by summation of these elements outputs an adequate span for lower pressure range application can be achieved.

Instead of using custom made sensing element, which for EVAP pressure range has a large and thin diaphragm, it is proposed to use element with a smaller size, thicker diaphragm which has multiple sensing elements embedded in it. A smaller but thicker diaphragm is much easier to manufacture and control. The overall die size will be considerably smaller. Taking EVAP example, the sensing element will be build using a diaphragm size normally used for larger pressure

range, say 50 kPa, range of DPFE sensor. Instead of one we will implant four or more strain gauges in this diaphragm. Since each strain gauge is exposed only to a fraction of the full pressure range, each of them will respond approximately the same way, but with lower sensitivity. In any sensor design it is advantageous to have sensor's sensitivity as large as possible. In order to increase the overall sensitivity we add individual strain gauge responses together. Summation of the outputs of all or some of these sensing elements will increase the span of the output signal approximately as many times as many output signals will be added.

Adding four sensing elements outputs will create an output signal for EVAP application which has 67% of the sensitivity of DPFE element. Such signal can be easily handled by the signal conditioning circuit.

Proposed approach is the best suitable for the design of the monolithic sensor. Monolithic sensor integrates both electronic circuit and the pressure dependent sensing element on single silicon die. The proposed solution allows to use only one standard mask set and wafer process to fabricate, for example, silicon monolithic PRT pressure sensors for such applications as DPFE and EVAP despite the fact that their pressure ranges are very different. If we want to use the sensor for DPFE application one strain gauge will be connected to the signal conditioning circuit. The EVAP application will use four strain gauges whose outputs are added to create an output that has correct span for the signal conditioning circuit.

Figure 4 shows four sensing elements implemented on one diaphragm.

These sensors can be of the localized Wheatstone bridge type and have to be positioned in a specific location on the diaphragm. Etching of the wafer diaphragms to a certain thickness will create a sensor that is suitable for one range. Another lower pressure range is implemented by adding more sensing elements outputs together. Depending on the pressure range being requested an appropriate number of output signals will be added to the on-die signal conditioning circuit via electrical switches. In general the sensors with the smaller pressure range can be implemented by connecting the sensors with the larger pressure ranges Figure 5 shows general summing concept. A detailed implementation using current summation is presented in Figure 6. If we use a first order approximation and express each sensor output as where P is applied pressure, bi is sensing element offset and zizis sensing element pressure sensitivity, then the sum of four such outputs will give the resultant differential voltage, i=l to 4, which practically means increasing the sensitivity by the factor of four. It is also important to note that the nature of resultant response will be preserved. Since a differential voltage Vd of each sensing element can be accurately approximated with the polynomial (where ao to a8 are constant coefficients, P is applied pressure and T is the temperature)

then the general form of the resultant summed voltage will be the same.

Signal addition does not alter the form of this equation but changes its coefficients values only. Thus calibration and temperature compensation will apply either if we use one differential voltage or more differential voltages added together. It can also be seen that summation process increases not only sensitivity but also adds offset voltages of the individual elements. In signal conditioning of the sensors it is beneficial to keep overall offset voltage low. This can be accomplished by having offset voltages of the individual sensing elements around zero by design. Figure 7 shows how the resultant summed voltage Vd is presented to the signal conditioning circuit.

WHAT IS"NEW"ABOUT THE INVENTION? Implement a monolithic sensor for lower pressure range using multiple higher pressure sensors instead of making custom sensor for each pressure range that is large, difficult to control and costly.

Use one standard mask set and one wafer process to fabricate monolithic PRT pressure sensors for lower pressure ranges and higher pressure ranges.

Layout multiple, for example, four higher pressure sensors on one die and implement a lower pressure sensor by adding sensors outputs.

Use on-die electrical switches to connect elements to the signal conditioning circuit for lower pressure sensor and for higher pressure sensors, depending on need.

WHAT ADVANTAGES DOES THE INVENTION HAVE OVER THE CURRENT SOLUTIONS? Standardize and simplify design and fabrication of the monolithic sensor.

Allow to make a single monolithic sensor for lower pressure ranges and higher pressure ranges.

Easy to manage different products in the production line.

Timed etch technique can be safely used.

Considerably lowers cost of the monolithic sensor.

What is claimed is: